Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Shiu Ko Jang Jian"'
1
Akademický článek
Monitoring metal contamination of silicon by multiwavelength room temperature photoluminescence spectroscopy
Autor: Shiu-Ko Jang Jian, Chih-Cherng Jeng, Woo Sik Yoo
Publikováno v: AIP Advances, Vol 2, Iss 4, Pp 042164-042164-8 (2012)
Thin thermal oxide film (∼36 nm) was grown on p--Si (100) wafers in a vertical furnace at 950 °C for 90 min in 1 atm dry O2 as a vehicle for monitoring metal contamination. They are annealed in separate vertical furnaces at 1100°C for 120 min in
Externí odkaz: https://doaj.org/article/a967548ae4a24afa8ca7c09675ad7b1b
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2
Akademický článek
Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy
Autor: Min-Hao Hong, Chun-Wei Chang, Dung-Ching Perng, Kuan-Ching Lee, Shiu-Ko Jang Jian, Wei-Fan Lee, Yen Chuang, Yu-Ta Fan, Woo Sik Yoo
Publikováno v: AIP Advances, Vol 2, Iss 3, Pp 032150-032150-10 (2012)
B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectro
Externí odkaz: https://doaj.org/article/d5c3a98906c945a1aa0ea730ca976625
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3
Akademický článek
Contactless monitoring of Ge content and B concentration in ultrathin single and double layer Si1-xGex epitaxial films using multiwavelength micro-Raman spectroscopy
Autor: Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shiu-Ko Jang Jian, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v: AIP Advances, Vol 2, Iss 1, Pp 012124-012124-8 (2012)
Non-contact monitoring of Ge content and B concentration in single and double Si1-xGex epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determi
Externí odkaz: https://doaj.org/article/212d8a7e9b6b420f87ff8e4bd282227e
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4
Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy
Autor: Chih-Mu Huang, Ting-Chun Wang, Woo Sik Yoo, Ying-Lang Wang, Chih-Cherng Jeng, Shiu-Ko Jang Jian
Publikováno v: Journal of Materials Research. 28:1269-1277
The quality of interface between ultrathin silicon dioxide films and their silicon (Si) wafers was characterized using room-temperature photoluminescence (RTPL) and Raman spectroscopy. Three types of low-temperature (350 °C or room temperature) oxid
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8928db7d5537d06d02c9356df305cfea
https://doi.org/10.1557/jmr.2013.78
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5
Visualization of Plasma Etching Damage of Si Using Room Temperature Spectroscopic Photoluminescence
Autor: Chih-Mu Huang, Ying-Lang Wang, Ting-Chun Wang, Shiu-Ko Jang Jian, Woo Sik Yoo, Chih-Cherng Jeng
Publikováno v: ECS Transactions. 53:167-176
Plasma processes have been widely used in the manufacturing of semiconductor devices. Etching of polysilicon, dielectric and metal films, dielectric deposition, cleaning, sputtering, photoresist stripping and ion implantation commonly use plasma assi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c45bcc5e2eefa542d6f8b265ebe7426e
https://doi.org/10.1149/05303.0167ecst
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7
Room Temperature Photoluminescence and Ultraviolet Raman Characterization of Boron Implanted Silicon under Various Laser Annealing Conditions
Autor: Woo Sik Yoo, Shiu Ko Jang Jian, Dung-Ching Perng, Min Hao Hong
Publikováno v: ECS Journal of Solid State Science and Technology. 1:P297-P302
Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p−-Si wafers and low-energy, low-dose boron (B) implanted n−-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implant
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f83048ded494fdf6b5fcb328f66729d
https://doi.org/10.1149/2.024206jss
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9
Photoluminescence and Raman characterization of excessive plasma etch damage of silicon
Autor: Hiroshi Harima, Ying-Lang Wang, Chih-Mu Huang, Ting-Chun Wang, Shiu-Ko Jang Jian, Woo Sik Yoo, Noriyuki Hasuike, Chih-Cherng Jeng, Hiroshi Nishigaki
Publikováno v: 2013 13th International Workshop on Junction Technology (IWJT).
Plasma processes have long been used in various stages of semiconductor device fabrication. Plasma enhanced chemical vapor deposition (PECVD) has been widely used as a low temperature silicon dioxide film deposition method in the semiconductor indust
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bbab9d412cd2d1d3206b80094125fe4e
https://doi.org/10.1109/iwjt.2013.6644501
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10
Monitoring metal contamination of silicon by multiwavelength room temperature photoluminescence spectroscopy
Autor: Chih-Cherng Jeng, Shiu-Ko Jang Jian, Woo Sik Yoo
Publikováno v: AIP Advances, Vol 2, Iss 4, Pp 042164-042164-8 (2012)
Thin thermal oxide film (∼36 nm) was grown on p--Si (100) wafers in a vertical furnace at 950 °C for 90 min in 1 atm dry O2 as a vehicle for monitoring metal contamination. They are annealed in separate vertical furnaces at 1100°C for 120 min in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59ba32ed20cb886cc4598a9623944c11
https://doi.org/10.1063/1.4769746
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