Zobrazeno 1 - 10
of 134
pro vyhledávání: '"Shiu, Hung Wei"'
Autor:
Okamoto, Jun, Wang, Ru-Pan, Chu, Yen-Yi, Shiu, Hung-Wei, Singh, Amol, Huang, Hsiao-Yu, Mou, Chung-Yu, Teh, Sucitto, Jeng, Horng-Tay, Du, Kai, Xu, Xianghan, Cheong, Sang-Wook, Du, Chao-Hung, Chen, Chien-Te, Fujimori, Atsushi, Huang, Di-Jing
Publikováno v:
adv. mater. 36, 2309172 (2024)
X-ray circular dichroism, arising from the contrast in X-ray absorption between opposite photon helicities, serves as a spectroscopic tool to measure the magnetization of ferromagnetic materials and identify the handedness of chiral crystals. Antifer
Externí odkaz:
http://arxiv.org/abs/2312.07081
Autor:
Chen, Jhih-Wei, Hsieh, Shang-Hsien, Wong, Sheng-Shong, Chiu, Ya-Chi, Shiu, Hung-Wei, Wang, Chia-Hsin, Yang, Yaw-Wen, Hsu, Yao-Jane, Convertino, Domenica, Coletti, Camilla, Heun, Stefan, Chen, Chia-Hao, Wu, Chung-Lin
Publikováno v:
ACS Energy Lett. 2022, 7, 2297-2303
Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use sy
Externí odkaz:
http://arxiv.org/abs/2206.06638
Autor:
Wu, Xiao, Wang, Shengyuan, Zhang, Jianquan, Shiu, Hung-Wei, Hsu, Yao-Jane, Yan, He, Zhu, Junyi, Lu, Xinhui
Publikováno v:
In Nano Energy 1 December 2023 117
Autor:
Shiu, Hung Wei, 許紘瑋
102
III-nitride semiconductors have attracted a lot of attention due to its outstanding electronic and optical properties for the application of optoelectronic devices. However, several effects strongly influence the performance of the III-nitri
III-nitride semiconductors have attracted a lot of attention due to its outstanding electronic and optical properties for the application of optoelectronic devices. However, several effects strongly influence the performance of the III-nitri
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/17663897479505775220
Akademický článek
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Autor:
Chen, Jhih-Wei, Huang, Hao-Chun, Convertino, Domenica, Coletti, Camilla, Chang, Lo-Yueh, Shiu, Hung-Wei, Cheng, Cheng-Maw, Lin, Min-Fa, Heun, Stefan, Chien, Forest Shih-Sen, Chen, Yi-Chun, Chen, Chia-Hao, Wu, Chung-Lin
Publikováno v:
Carbon 109 (2016) 300-305
In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when de
Externí odkaz:
http://arxiv.org/abs/1603.05862
Akademický článek
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Autor:
Chiu, Ming-Hui, Zhang, Chendong, Shiu, Hung Wei, Chuu, Chih-Piao, Chen, Chang-Hsiao, Chang, Chih-Yuan S., Chen, Chia-Hao, Chou, Mei-Yin, Shih, Chih-Kang, Li, Lain-Jong
Publikováno v:
Nature Communications 6:7666 (2015)
The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD heterostructu
Externí odkaz:
http://arxiv.org/abs/1406.5137
Autor:
Chen, Jhih-Wei, Wang, Chiang-Lun, Shiu, Hung Wei, Lin, Chi-Yuan, Chang, Chen-Shiung, Chien, Forest Shih-Sen, Chen, Chia-Hao, Chen, Yi-Chun, Wu, Chung-Lin
The core-level electronic structures of the exfoliated graphene sheets on a Au-coated SiOx substrate have been studied by synchrotron radiation photoelectron spectroscopy (SR-PES) on a micron-scale. The graphene was firstly demonstrated its visibilit
Externí odkaz:
http://arxiv.org/abs/1205.5117
Akademický článek
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