Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Shishou Kang"'
Autor:
Jiahui Liu, Zhen Zhang, Maoxiang Fu, Xiaonan Zhao, Ronghuan Xie, Qiang Cao, Lihui Bai, Shishou Kang, Yanxue Chen, Shishen Yan, Liangmo Mei, Guolei Liu
Publikováno v:
Results in Physics, Vol 52, Iss , Pp 106803- (2023)
The large anomalous Hall effect (AHE) in antiferromagnetic(AFM) Weyl semimetal Mn3Sn attracts intensive attentions in spintronics. Here, we report the structural property of high quality Mn3Sn thin film on insulator substrate MgO(110) by molecular be
Externí odkaz:
https://doaj.org/article/4ee6761267a7468b8ac20a14644acdad
Autor:
Xiaonan Zhao, Xiujuan Wang, Yanan Dong, Wei Wang, Lihui Bai, Yanxue Chen, Shishou Kang, Shishen Yan, Yufeng Tian
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract In the field of information hardware security, random variations obtained during device manufacturing process play a key role in generating unique and unclonable security keys. Existing physical unclonable functions (PUFs) utilizing these st
Externí odkaz:
https://doaj.org/article/4805f893e5b04426abbcbf5278cdf90d
Autor:
Maoxiang Fu, Qiang Cao, Jiahui Liu, Kun Zhang, Guolei Liu, Shishou Kang, Yanxue Chen, Shishen Yan, Lihui Bai, Liangmo Mei, Zhen-Dong Sun
Publikováno v:
Results in Physics, Vol 29, Iss , Pp 104686- (2021)
We report an unconventional carrier-dependent anomalous Hall effect (AHE) with a quadratic scaling relation in epitaxial films of a ferromagnetic semiconductor (ZnCo)O with a high Co concentration. We show the co-existence of AHE together with the no
Externí odkaz:
https://doaj.org/article/c3ba5e0287ca4edc972f6a8064cd98e5
Autor:
Runrun Hao, Kun Zhang, Weibin Chen, Junda Qu, Shishou Kang, Xueying Zhang, Dapeng Zhu, Weisheng Zhao
Publikováno v:
ACS Applied Materials & Interfaces. 14:57321-57327
For the spin-to-charge conversion (SCC) in heavy metal/ferromagnet (HM/FM) heterostructure, the contribution of interfacial spin-orbit coupling (SOC) remains controversial. Here, we investigate the SCC process of the Pt/NiFe heterostructure by the sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97e6ba35bf318812a48e35c09a6b8a47
https://doi.org/10.1021/acsami.2c13434
https://doi.org/10.1021/acsami.2c13434
Autor:
Tie Zhou, Sai Zhou, Xuejie Xie, Xiaonan Zhao, Yanan Dong, Jing Wang, Weibin Chen, Qunwen Leng, Lihui Bai, Yanxue Chen, Shishou Kang, Yaowen Liu, Shishen Yan, Yufeng Tian
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1220997a505f3bcc3afb6b318a32a5bc
https://doi.org/10.1103/physrevb.107.104411
https://doi.org/10.1103/physrevb.107.104411
Publikováno v:
Chinese Science Bulletin. 66:2033-2041
Via exploring the spin dynamics and transport properties at interfaces of magnetic material/non-magnetic metal bilayers, spintronics advanced many techniques on generation, detection, and manipulation of spin currents, which laid down a foundation fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b5afabe079dbd0d919813853d0b2f9
https://doi.org/10.1360/tb-2021-0166
https://doi.org/10.1360/tb-2021-0166
Autor:
Xingchen Zhao, Guolei Liu, B. Jiang, Shishou Kang, Shuyun Yu, S. S. Yan, G.B. Han, Wei Zhao, Weiguo Zhang, R Chen
Publikováno v:
Nanoscale. 13:2665-2672
The interfacial Dzyaloshinskii-Moriya interaction (i-DMI) has been exploited in as-made symmetrical Au/[Fe/Au]n structures. By tailoring the chirality of the i-DMI at the Au/Fe interface, an overall enhancement of the i-DMI can be obtained in such a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52f1821dcace3773507aa30a3edfcf0
https://doi.org/10.1039/d0nr06488b
https://doi.org/10.1039/d0nr06488b
Publikováno v:
Chinese Science Bulletin. 66:2071-2084
Novel spintronic devices with low power consumption, nonvolatility, and high storage density are highly desired to meet the rapid development of modern information storage and communication technology, which poses a great challenge to both material a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ad9dfd0dd46bcfeb8a8ee5272e5dfd
https://doi.org/10.1360/tb-2020-1439
https://doi.org/10.1360/tb-2020-1439
Publikováno v:
physica status solidi (a). 220:2200656
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae7cd4d03722d921a0b198304cbcc0e
https://doi.org/10.1002/pssa.202200656
https://doi.org/10.1002/pssa.202200656
Autor:
Lihui Bai, Jiahui Liu, Zhen-Dong Sun, Liangmo Mei, Guolei Liu, Shishou Kang, Shishen Yan, Qiang Cao, Yanxue Chen, Maoxiang Fu, Kun Zhang
Publikováno v:
Results in Physics, Vol 29, Iss, Pp 104686-(2021)
We report an unconventional carrier-dependent anomalous Hall effect (AHE) with a quadratic scaling relation in epitaxial films of a ferromagnetic semiconductor (ZnCo)O with a high Co concentration. We show the co-existence of AHE together with the no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b12845469bbc52b33e36f03a01f144ff
http://www.sciencedirect.com/science/article/pii/S2211379721007671
http://www.sciencedirect.com/science/article/pii/S2211379721007671