Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Shirun Ho"'
Autor:
Shirun Ho
Publikováno v:
Macromolecular Theory and Simulations. 24:595-609
Technology for designing functional polymers needs to incorporate biomimetic structures for a new functionality. A simulation method, referred to as “molecular-cluster-assembly,” is used to design aggregate structures comprised of oligomers in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309311c60fa0d506f63d8bb25d4c533f
https://doi.org/10.1002/mats.201500041
https://doi.org/10.1002/mats.201500041
Autor:
Mutsumi Aoyagi, Shirun Ho
Publikováno v:
Macromolecular Theory and Simulations. 22:443-461
A new method for analyzing oriented structures of polymers and their formation processes, called “molecular-cluster-assembly” (MoCA), is proposed. With this method, a polymer structure is assembled by molecular clusters at local minimum-energy st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05de5c085c9fac0cc0deccbfcabfbc34
https://doi.org/10.1002/mats.201300101
https://doi.org/10.1002/mats.201300101
Autor:
Keizo Suzuki, Masatoshi Shiiki, Miyake Tatsuya, Shunichiro Nobuki, Norihiro Uemura, Yoshiro Mikami, Shirun Ho, Shoichi Kubo, Mori Shunsuke
Publikováno v:
IEEE Transactions on Electron Devices. 57:3377-3387
A discharge probability model is proposed to analyze the stochastic distribution of the discharge delay time. The distribution is described as a hybrid function between the exponential and Gaussian distributions and their characteristic properties, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574c359dd04dffd93a79b2eb33ee8608
https://doi.org/10.1109/ted.2010.2079170
https://doi.org/10.1109/ted.2010.2079170
Autor:
Shirun Ho, Motoi Tobita
Publikováno v:
Journal of chemical theory and computation. 4(7)
The electronic structure of an MgO (001) surface with aggregated oxygen vacancies at the surface was investigated by using a density-functional embedded-cluster method using Mg45Ox (x = 39-45) clusters and the B3LYP/CEP-121G level of calculation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aeb4764439997835c3dfb2f879decbff
https://pubmed.ncbi.nlm.nih.gov/26636359
https://pubmed.ncbi.nlm.nih.gov/26636359
Autor:
Shirun Ho, Kenichi Yamamoto, Keizo Suzuki, Katsunori Muraoka, Norihiro Uemura, Hiroshi Kajiyama
Publikováno v:
Journal of Applied Physics. 96:6082-6093
An analytical method to study the discharge-radiation dynamics (DRD) in alternating current plasma display panels was developed. The input parameters for this DRD analysis were experimentally determined panel voltage and current wave forms. Discharge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9c970dff741d66d4188426135aea6b5
https://doi.org/10.1063/1.1814416
https://doi.org/10.1063/1.1814416
Autor:
Yusuke Yajima, Yoshihiko Hatano, Shirun Ho, Norihiro Uemura, Noriyuki Kouchi, Yoshimi Kawanami, Keizo Suzuki
Publikováno v:
Journal of Applied Physics. 88:5605-5611
The theoretical formulation given in this article allows the vacuum ultraviolet (VUV) production efficiency to be calculated from the electron temperature of the plasma and the gas parameters including gas mixing ratio, excitation energies, and excit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3883a53d4140c4d6b1faed0efebf1188
https://doi.org/10.1063/1.1320027
https://doi.org/10.1063/1.1320027
Publikováno v:
Journal of Physics: Condensed Matter. 4:8783-8800
Lateral-mode non-conserving resonant tunnelling through a zero-dimensional AlGaAs/InGaAs/AlGaAs resonant tunnelling diode (0D RTD) has been analysed by numerically solving the three-dimensional Schrodinger equation with scattering boundary conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c7ed078aed44857e96a4863ae90824
https://doi.org/10.1088/0953-8984/4/45/013
https://doi.org/10.1088/0953-8984/4/45/013
Dynamic Simulation Of Multiple Trapping Processes And Anomalous Frequency Dependence In GaAs MESFETs
Publikováno v:
[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).
Frequency dependent characteristics of GaAs MESFETs due to deep traps are one of the most serious problems in achieving high device performance. In this study, mechanisms of frequency dependent transconductance Gm and output resistance Rd are unifyin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a223fd50e50e77bd454dfd336c70f1
https://doi.org/10.1109/vpad.1993.724710
https://doi.org/10.1109/vpad.1993.724710
Publikováno v:
[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).
The transport mechanism in heavily doped systems is dominated by ionized impurity scattering involved with electron polarization. The objectives of this paper are to present a new mobility model which incorporates the quantum mechanical screening eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2263356c5109b6d45feb37f75bc708d
https://doi.org/10.1109/vpad.1993.724775
https://doi.org/10.1109/vpad.1993.724775
Publikováno v:
International Conferencre on Simulation of Semiconductor Processes and Devices.
A new multi-phonon model for hydrogen desorption at Si/SiO/sub 2/ interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Cairo method is coupled with Device Monte Cairo method by using a mediator-based common s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a438ebafee9adb44c8f17ee1aef4b8e
https://doi.org/10.1109/sispad.2002.1034564
https://doi.org/10.1109/sispad.2002.1034564