Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Shiromani Balmukund Rahi"'
Autor:
Neha Paras, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Manisha Bharti, Young Suh Song
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100101- (2024)
Recent experimental studies have shown lanthanum-doped hafnium oxide (La:HfO2) possessing ferroelectric properties. This material is of special interest since it is based on lead-free, simple binary oxide of HfO2, and has excellent endurance property
Externí odkaz:
https://doaj.org/article/7d3c407afd1d435da6cf61bd93bc2777
Autor:
Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Sandip Bhattacharya, J. Ajayan, Biswajit Jena, Ilho Myeong, Byung-Gook Park, Young Suh Song
Publikováno v:
IEEE Transactions on Electron Devices. 69:6127-6132
Autor:
Samir Labiod, Billel Smaani, Shubham Tayal, Shiromani Balmukund Rahi, Hichem Sedrati, Saida Latreche
Publikováno v:
Silicon. 15:1181-1191
Publikováno v:
Intelligent Green Technologies for Sustainable Smart Cities. :195-225
Publikováno v:
The Journal of Supercomputing.
Autor:
Chandan Kumar Pandey, Diganta Das, Umakant Nanda, Debashish Dash, Saurabh Chaudhury, Young Suh Song, Shiromani Balmukund Rahi
Publikováno v:
Tunneling Field Effect Transistors ISBN: 9781003327035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7285839fb07fbce156ddb4172f901833
https://doi.org/10.1201/9781003327035-8
https://doi.org/10.1201/9781003327035-8
Autor:
Young Suh Song, Youngjae Song, T.S. Arun Samuel, P. Vimala, Shubham Tayal, Ritam Dutta, Chandan Kumar Pandey, Abhishek Kumar Upadhyay, Ilho Myeong, Shiromani Balmukund Rahi
Publikováno v:
Tunneling Field Effect Transistors ISBN: 9781003327035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0541b0ceb2f6de4511b520974b1e4607
https://doi.org/10.1201/9781003327035-12
https://doi.org/10.1201/9781003327035-12
Publikováno v:
Silicon. 14:10967-10976