Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Shiro Yamasaki"'
Publikováno v:
physica status solidi (a). 194:563-567
Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd1f2a29a3b5b56c739d7d5ea3e92db
https://doi.org/10.1002/1521-396x(200212)194:2<563::aid-pssa563>3.0.co
https://doi.org/10.1002/1521-396x(200212)194:2<563::aid-pssa563>3.0.co
Publikováno v:
physica status solidi (a). 188:9-13
GaN-based multiple quantum well (MQW) laser diodes have been improved greatly by introducing GaN/GaInN optical-guiding layers and by reducing the dislocation density. The lifetime of continuous-wave operation has been improved to 700 hours at 3mW out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3744f9971c1c7cf4489ffe6bbb2e08d
https://doi.org/10.1002/1521-396x(200111)188:1<9::aid-pssa9>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<9::aid-pssa9>3.0.co
Autor:
Seiji Nagai, Junichi Umezaki, Masayoshi Koike, Hidenori Ishikawa, Yasuo Koide, Setsuko Kobayashi, Masanori Murakami, Shiro Yamasaki
Publikováno v:
Applied Surface Science. :373-379
The effects of GaN surface treatments and work functions of the contact metals on the electrical properties at the p-GaN/metal interfaces were investigated. A contamination layer consisting of GaO x and adsorbed carbons was found on the GaN substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58647b695b6619b9f47ec6c77b22e9dc
https://doi.org/10.1016/s0169-4332(97)80110-9
https://doi.org/10.1016/s0169-4332(97)80110-9
Autor:
J. Umezaki, Masanori Murakami, Yasuo Koide, Seiji Nagai, Setsuko Kobayashi, Masayoshi Koike, Shiro Yamasaki, Hidenori Ishikawa
Publikováno v:
Journal of Applied Physics. 81:1315-1322
In order to examine the possibility of preparing a nonreacted (nonalloyed) Ohmic contact to p-GaN, the effects of GaN surface treatments and work functions of the contact metals on the electrical properties between the metal contacts and p-GaN were i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1467bf6c65828abf16cd9f5b99f2957
https://doi.org/10.1063/1.363912
https://doi.org/10.1063/1.363912
Autor:
Hideto Yamauchi, Shiro Yamasaki, Hiroshi Hashiyada, Naotaka Miyagawa, Masatake Takagi, Toshiyasu Kugimiya
Publikováno v:
The journal of the Japanese Practical Surgeon Society. 55:365-369
The evaluation, surgical repair and follow up are described for an asymptomatic 5-year-old girl with unilateral total anomalous pulmonary venous return from the left lung through the innominate vein without atrial septal defect (ASD). Although the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20e453810d4a4caaab1feaf9de2f4447
https://doi.org/10.3919/ringe1963.55.365
https://doi.org/10.3919/ringe1963.55.365
Autor:
Kenji Nagano, Yoshiaki Kunimune, Atsushi Kinoshita, Shinji Nishihara, Shiro Yamasaki, Toshiharu Kawanishi
Publikováno v:
Orthopedics & Traumatology. 42:831-835
Suppurative knee joint infection probably due to intraarticular steroid injection, has been increasing recently. In this study, we report the results of a follow-up survey conducted in eleven patients (chiefly those with over five-year course after o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009d8822ba4dccf35f5fbee01d0569eb
https://doi.org/10.5035/nishiseisai.42.831
https://doi.org/10.5035/nishiseisai.42.831
Publikováno v:
Pediatrics International. 32:67-75
Though the rubella vaccination programme for adolescent girls was introduced in Japan in 1977, rubella epidemics have occurred repeatedly. Also in Sasebo, Japan in 1987, we experienced various complications as follows: encephalitis (five cases), meni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d4910b4d0e78c7c38b492b8b287f0e
https://doi.org/10.1111/j.1442-200x.1990.tb00786.x
https://doi.org/10.1111/j.1442-200x.1990.tb00786.x
Autor:
Y. Taga, Shiro Yamasaki, Tomohiko Mori, Masayoshi Koike, Naoki Shibata, S. Asami, Takahiro Kozawa, Takeshi Ohwaki, Seiji Nagai
Publikováno v:
Applied Physics Letters. 69:3537-3539
We measured the Schottky barrier heights and specific contact resistivities of four different metals on p‐type GaN. The Schottky barrier heights of Pt, Ni, Au, and Ti were obtained from the current‐voltage characteristics to be 0.50, 0.50, 0.57,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a84347b76e51d453abb295f2a44feb2
https://doi.org/10.1063/1.117237
https://doi.org/10.1063/1.117237
Autor:
S. Asami, Isamu Akasaki, Seiji Nagai, N. Koide, Shiro Yamasaki, Masayoshi Koike, Hiroshi Amano
Publikováno v:
Applied Physics Letters. 68:1403-1405
High‐quality Ga0.92In0.08N–GaN multiple quantum wells structures (MQW) were grown successfully by metalorganic vapor phase epitaxy. Fine multilayer structures with a thickness period of 7–9 nm were detected by secondary ion mass spectroscopy. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f53babc8b15045ac55907236af9381df
https://doi.org/10.1063/1.116094
https://doi.org/10.1063/1.116094
Publikováno v:
SPIE Proceedings.
The GaN-based multiple quantum wells (MQW) laser diodes have been improved excellently by introducing GaN/GaInN optical- guiding layers and by reducing dislocation density. The lifetime of continuous wave operation has been improved to longer than 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56bcc591c2d6273ccf2e75710ca6ecd5
https://doi.org/10.1117/12.426840
https://doi.org/10.1117/12.426840