Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Shiro Takeno"'
Publikováno v:
AIP Advances, Vol 2, Iss 4, Pp 042144-042144-5 (2012)
A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM)
Externí odkaz:
https://doaj.org/article/54d226cd5f68489eaac04c492ae8f05c
Publikováno v:
International Symposium for Testing and Failure Analysis.
The transistor structure of memory devices and other cutting-edge semiconductor devices has become extremely minute and complicated owing primarily to advances in process technology and employment of three-dimensional structures. Among the various ap
Publikováno v:
Applied Surface Science. 349:89-92
Laser-assisted atom probe tomography (LA-APT) was applied to SiN thin films with enriched 15N isotope in order to investigate the possibility of obtaining the nitrogen distribution in silicon-based structures by LA-APT analyses. SiN films with the ra
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:260-265
The advanced carrier concentration evaluation scheme was proposed with combined higher precise scanning spreading resistance microscopy (SSRM) measurement and technology-CAD (TCAD) analysis in this paper. The cyclic contact (CC) method was applied to
Publikováno v:
Applied Surface Science. 290:194-198
18O-enriched SiO2 thin film with the 16O:18O ratio of around 1:1 has been analyzed by laser-assisted atom probe tomography (LA-APT) using 343 nm-wavelength ultraviolet laser or 532 nm-wavelength green laser in order to investigate the quantitativenes
Autor:
R. Benbalagh, Akira Hokazono, I. Martin, B. Sallé, Takeshi Sonehara, Shiro Takeno, Mitsuhiro Tomita, L Renaud, T. Kinno, Haruko Akutsu, Shigeru Kawanaka
Publikováno v:
Applied Surface Science. 259:726-730
Laser-assisted atom probe tomography (LA-APT) was applied to NiPtSi (0, 30, and 50% Pt contents) thin films on Si substrates. Consistent results with those of high-resolution Rutherford backscattering spectrometry (HR-RBS) were obtained. Based on the
Publikováno v:
ECS Transactions. 35:213-223
Scanning spreading resistance microscopy (SSRM) is an powerful technique for 2D-carrier profiling of scaled silicon devices, with its wide dynamic range of carrier concentration and high spatial resolution. We achieved the 1-nm high spatial resolutio
Autor:
Kei Kiyokawa, Takeharu Ishikawa, Shiro Takeno, Reiko Saito, Satoru Nagashima, Akio Takano, Takahiro Kashiwagi, Jun Asakawa, Masaaki Fujii, Tetsuo Sakamoto, Haruko Akutsu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:03F128
The element and/or material dependence of the useful yield in laser-ionization sputtered neutral mass spectrometry (SNMS) using a high-photon-flux laser was investigated. Useful yields obtained from Si, B, As, and O in Si and SiO2 matrices using both
High-sensitivity x-ray absorption fine structure investigation of arsenic shallow implant in silicon
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 64:808-811
High-sensitivity fluorescence-yield x-ray absorption fine structure spectroscopy (XAFS) has been investigated to characterize the local structure around arsenic shallow implant in silicon. Fluorescence-yield XAFS experiments were performed using a hi
Autor:
Mitsuo Koike, Mitsuhiro Tomita, T. Kinno, Tomokazu Sasaki, Hiroki Tanaka, N. Yoshida, Y. Hori, Shiro Takeno
Publikováno v:
Applied Surface Science. 255:1311-1315
The influence of the initial surface roughness and the structure (crystalline/amorphous) of delta-doped reference materials (fabricated with molecular beam epitaxy (MBE) and magnetron sputtering) for depth-scale calibration of secondary ion mass spec