Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Shiro Ninomiya"'
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Implant simulation using the MARLOWE code is introduced to take the channeling effect into account. Using this code, the behavior of implanted ions in a crystalline Si substrate can be better understood. In particular, the lateral distribution cannot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a5f5434dc00252ab6b13b021a3e856
https://doi.org/10.1109/iit.2018.8807932
https://doi.org/10.1109/iit.2018.8807932
Autor:
Mitsukuni Tsukihara, Toshio Yumiyama, Yasuharu Okamoto, Akihiro Ochi, Kazuhisa Ishibashi, Shiro Ninomiya, Mitsuaki Kabasawa, Yoji Kawasaki, Hiroyuki Kariya, Yusuke Ueno
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
One of the most important issues in semiconductor manufacturing is to suppress variation of characteristics in semiconductor devices within a wafer, in order to enhance production yield. In this report, an intentional two-dimensional (2D) nonuniform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b32bfe2ace5e6c47bf2ac8e55ba4787
https://doi.org/10.1109/edtm.2018.8421497
https://doi.org/10.1109/edtm.2018.8421497
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
The SAion is a leading-edge ion implanter developed for the upcoming generation. The SAion has extremely wide process coverage and high productivity throughout both the medium current (MC) and high current (HC) process ranges. In this paper, beam qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6763204465320ef2b2f0654d921f8535
https://doi.org/10.1109/iit.2016.7882842
https://doi.org/10.1109/iit.2016.7882842
Autor:
Yasuharu Okamoto, Shiro Ninomiya, Kazuhisa Ishibashi, Mitsukuni Tsukihara, Yusuke Ueno, Toshio Yumiyama, Akihiro Ochi, Mitsuaki Kabasawa
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f657efd6de19e3d258ddce5abd23788
https://doi.org/10.1109/iit.2016.7882877
https://doi.org/10.1109/iit.2016.7882877
Autor:
Mitsukuni Tsukihara, Kazuhisa Ishibashi, Shiro Ninomiya, Toshio Yumiyama, Kazuyoshi Ueno, Akihiro Ochi, Mitsuaki Kabasawa, Akira Funai
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b5b1b24100c757633230a43862a942
https://doi.org/10.1109/iit.2016.7882883
https://doi.org/10.1109/iit.2016.7882883
Autor:
Shiro Ninomiya, Shrikant Acharya
Publikováno v:
INDIN
A normal way to specify network stack performance for a platform is by indicating the CPU utilization, and the code size (program memory usage) of the stack. This does not take into account performance characterization using different Ethernet packet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2475c84bd64189e0bd473e3d5a1d5f3e
https://doi.org/10.1109/indin.2016.7819351
https://doi.org/10.1109/indin.2016.7819351
Autor:
Mitsukuni Tsukihara, Yoshitaka Amano, Kazuhiro Watanabe, Hiroyuki Kariya, Haruka Sasaki, Shiro Ninomiya, Mitsuaki Kabasawa, Kato Koji, Koji Inada, Kazuyoshi Ueno
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d251f462f2c1a4122e10266dd31d18
https://doi.org/10.1109/iit.2014.6940029
https://doi.org/10.1109/iit.2014.6940029
Autor:
Mitsukuni Tsukihara, Haruka Sasaki, Shiro Ninomiya, Kazuyoshi Ueno, Kazuhiro Watanabe, Koji Inada, Mitsuaki Kabasawa, Noriyasu Ido
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In order to fabricate highly sensitive image sensors (IS), ultra-high energetic ion beams such as 5MeV of boron are required. In order to address the requirement as well as more aggressive requirements of leading-edge IS, SEN has developed the S-UHE,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125928a41527f533d67ed1894bf128ab
https://doi.org/10.1109/iit.2014.6940032
https://doi.org/10.1109/iit.2014.6940032
Autor:
Yasuhiko Kimura, Yasuharu Okamoto, Toshio Yumiyama, Akihiro Ochi, Shiro Ninomiya, Yoshiaki Inda, Mitsukuni Tsukihara
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f69b44251fc06307bc8d84ad45fcfff
https://doi.org/10.1109/iit.2014.6940028
https://doi.org/10.1109/iit.2014.6940028
Publikováno v:
Applied Surface Science. :355-359
Kinetic energy and charge state dependencies of soft X-ray yields from Mo and Ta polycrystalline targets have been investigated for kev O q+ ( q = 2–7) ions. For X-rays for target atoms, MoM 1 N 2, 3 , MoM 2 N 4 , TaN 2 O 4 , TaN 3 O 4 and TaN 3 O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e52efe0013aed96205cacc6919b2db
https://doi.org/10.1016/0169-4332(96)00241-3
https://doi.org/10.1016/0169-4332(96)00241-3