Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shirinov, Ganjimurod"'
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
In the paper, the patterns of changes in the composition and structure of the surface layers of GaP(111) in bombardment by electrons with energies from 3 to 10 keV and doses in the range 1017 – 1020 cm–2 have been studied using the method of Auge
Externí odkaz:
https://doaj.org/article/aa9aca11f0cf4b08a9a7b937a545550b
Akademický článek
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Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 16, Iss 2 (2023)
In order to search for materials with improved semiconductor properties, thin films of GaInP have been fabricated on the GaP surface (the molecular beam epitaxy and ion implantation procedures were used). These films were investigated by the Auger el
Externí odkaz:
https://doaj.org/article/64eaa34d07454b6bb3f957676b86e2de
Autor:
Donaev, Sardor, Shirinov, Ganjimurod, Umirzakov, Baltokhodja, Donayev, Burkhan, Wang, Shenghao
Publikováno v:
Coatings (2079-6412); Oct2024, Vol. 14 Issue 10, p1231, 9p
Publikováno v:
AIP Conference Proceedings; 12/7/2022, Vol. 2686 Issue 1, p1-5, 5p
Publikováno v:
AIP Conference Proceedings; 6/16/2022, Vol. 2471 Issue 1, p1-6, 6p
Publikováno v:
AIP Conference Proceedings; 6/16/2022, Vol. 2471 Issue 1, p1-5, 5p
Publikováno v:
AIP Conference Proceedings Online; June 2022, Vol. 2432 Issue: 1 p050041-50045, 5p