Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Shirakawa, Michihiro"'
Publikováno v:
In Tetrahedron 2006 62(9):2016-2024
Autor:
Goto Akiyoshi, Tango Naohiro, Ryo Nishio, Hidenori Takahashi, Shirakawa Michihiro, Toru Fujimori, Marumo Kazuhiro, Mitsuhiro Fujita, Kei Yamamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 30:367-372
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::616e72894b0454019f04a4dc80569049
https://doi.org/10.2494/photopolymer.30.367
https://doi.org/10.2494/photopolymer.30.367
Publikováno v:
Journal of Photopolymer Science and Technology. 29:75-80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711fccc7395c210455fcdbf736d5d6dc
https://doi.org/10.2494/photopolymer.29.75
https://doi.org/10.2494/photopolymer.29.75
Autor:
Hironori Oka, Tadashi Omatsu, Furutani Hajime, Mitsuhiro Fujita, Shirakawa Michihiro, Toru Fujimori, Sakita Kyohei, Toru Tsuchihashi, Nishiki Fujmaki, Wataru Nihashi
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
For semiconductor device manufacturing, line width roughness (LWR) and defect reduction is one of the most important items to obtain high yield. In this study we described the development of novel high absorption resists for use in extreme ultra viol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3873fa1296ec2d242ffd3010888cc035
https://doi.org/10.1117/12.2297076
https://doi.org/10.1117/12.2297076
Akademický článek
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Autor:
Wataru Nihashi, Paolo A. Gargini, Shirakawa Michihiro, Toru Fujimori, Toru Tsuchihashi, Toshiro Itani, Kurt G. Ronse, Patrick P. Naulleau, Furutani Hajime
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
Extreme ultraviolet (EUV) lithography is considered to be the most effective strategy for realize 7 nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choice of EUV resist material that is capable of re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce685b22597e62e561d9398429f66274
https://doi.org/10.1117/12.2280303
https://doi.org/10.1117/12.2280303
Autor:
Wataru Nihashi, Hideaki Tsubaki, Marumo Kazuhiro, Tango Naohiro, Goto Akiyoshi, Kei Yamamoto, Hidenori Takahashi, Furutani Hajime, Mitsuhiro Fujita, Shirakawa Michihiro
Publikováno v:
SPIE Proceedings.
The main challenge in ArF lithography is to reduce cost of ownership (CoO) because increase in multi-patterning process is generally required to obtain a fine pattern. As a consequence, industry strongly requires ArF lithography process with a fast s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfdd17e9ce056137da66249fabf8c499
https://doi.org/10.1117/12.2257956
https://doi.org/10.1117/12.2257956
Autor:
Weimin Gao, Thomas Mülders, Ulrich Klostermann, Masahiro Yoshidome, Sou Kamimura, Hironobu Taoka, Grozdan Grozev, Shirakawa Michihiro, Waikin Li, Bernd Küchler
Publikováno v:
SPIE Proceedings.
Simulation of negative tone development (NTD) resist has become a challenge for physical resist modeling. Traditionally, resist modeling was mainly limited to reaction-diffusion models for post exposure bake (PEB) and standard development rate models
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab8fd6831ff3464547df8152f7f2a3d
https://doi.org/10.1117/12.2256568
https://doi.org/10.1117/12.2256568
Autor:
Ou Keiyu, Nanae Muraki, Takashi Yakushiji, Asakawa Daisuke, Naoya Hatakeyama, Mitsuhiro Fujita, Yasunori Yoneyama, Tadashi Omatsu, Shirakawa Michihiro, Toru Fujimori
Publikováno v:
2016 International Symposium on Semiconductor Manufacturing (ISSM).
Negative tone imaging (NTI) is a method for obtaining a negative-tone reversal pattern by developing with an organic solvent. As NTI process can break-through the resolution limit of a conventional positive-tone development (PTD) process, it has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96ac010eb61109be11eda994c46d42a4
https://doi.org/10.1109/issm.2016.7934529
https://doi.org/10.1109/issm.2016.7934529
Akademický článek
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