Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Shinya Yamakawa"'
Publikováno v:
Journal of Vacuum Science & Technology A. 37:051004
This work describes the modeling of the surface reactions involved in atomic layer etching (ALE) of SiO2 and Si3N4 with a deposition step using C4F8/O2/Ar plasma and an Ar plasma etch step. In the etching step, the surface was assumed to consist of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71526a931932bc909719d6b9b92759a
https://doi.org/10.1116/1.5105384
https://doi.org/10.1116/1.5105384
Autor:
Sumio Kuwabara, Akihito Sakakidani, Toshiaki Tsuchiya, Masayuki Kamei, Kenichiro Sonoda, Naoyoshi Tamura, Shinya Yamakawa
Publikováno v:
ECS Transactions. 58:265-279
We propose a novel method for characterizing the oxide traps that participate in random telegraph noise (RTN) by using charging history effects on the traps. In this method, the variation in the frequency of the high/low drain current derived from RT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ca282b34a6acab2ef09f01b3ff01eb
https://doi.org/10.1149/05809.0265ecst
https://doi.org/10.1149/05809.0265ecst
Autor:
Takuya Shiina, Daisuke Yagihashi, Hidetake Ishizu, Shinya Yamakawa, Takahiro Yamada, Mihoko Kikuchi
Publikováno v:
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 126
A food inspection service system for home grown products or wild plants collected by individual consumers for self-consumption was implemented in Fukushima in Nov. 2012. About 500 NaI(Tl) scintillation spectrometers were distributed to 300 or more te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aceb5868c5634e02fd6e8dd5525557d7
https://pubmed.ncbi.nlm.nih.gov/28237291
https://pubmed.ncbi.nlm.nih.gov/28237291
Autor:
Munehisa Takei, Atsushi Ogura, Naoki Nagashima, Kohki Nagata, Amari Koichi, Masanori Tsukamoto, Y. Tateshita, Satoru Mayuzumi, Shinya Yamakawa, Daisuke Kosemura, Hitoshi Wakabayashi, Hiroaki Akamatsu, Terukazu Ohno
Publikováno v:
IEEE Transactions on Electron Devices. 57:1295-1300
An experimental study of mobility and velocity enhancement effects is reported for highly strained short-channel p-channel field-effect transistors (pFETs) using a damascene-gate process on Si (100) and (110) substrates. The relationship between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6673b92acc5376e5646681b8fb4e62c
https://doi.org/10.1109/ted.2010.2045703
https://doi.org/10.1109/ted.2010.2045703
Autor:
Munehisa Takei, Shinya Yamakawa, Kohki Nagata, Daisuke Kosemura, Hiroaki Akamatsu, Hitoshi Wakabayashi, Satoru Mayuzumi, Atsushi Ogura
Publikováno v:
ECS Transactions. 28:27-32
The two-dimensional channel-stress profiles in extremely high performance p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were evaluated by cross-sectional UV-Raman spectroscopy. We found the channel length dependence; the compre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f7fcc0429550139443e187dae6d1c8
https://doi.org/10.1149/1.3375585
https://doi.org/10.1149/1.3375585
Autor:
Satoru Mayuzumi, Y. Tateshita, T. Ohno, Masanori Tsukamoto, Daisuke Kosemura, Hitoshi Wakabayashi, Shinya Yamakawa, Munehisa Takei, Naoki Nagashima, Atsushi Ogura
Publikováno v:
IEEE Transactions on Electron Devices. 56:2778-2784
A damascene-gate process enhances the drivability in the shorter gate length region, as compared to a conventional gate-first process for pFETs with compressive stress SiN liners and embedded source/drain SiGe. The origin of the gate length effect fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd8869190d774759dca478ee951fffb
https://doi.org/10.1109/ted.2009.2031002
https://doi.org/10.1109/ted.2009.2031002
Publikováno v:
Solid-State Electronics. 53:959-971
This paper describes the impact of silicide layout in the source/drain region on the parasitic resistance of the multiple-fin triple-gate (TG) SOI MOSFET. For multiple-fin TG SOI MOSFET’s with narrow source and drain regions (∼40 nm), it is demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d6bc6759057a344ccc1ee17b41b141
https://doi.org/10.1016/j.sse.2009.06.008
https://doi.org/10.1016/j.sse.2009.06.008
Publikováno v:
ECS Transactions. 19:121-126
This paper reconsiders the design methodology of the short-channel GAA SOI MOSFET and proposes an advanced concept to enhance its performance. The new ideas are based on gate field engineering and source and drain diffusion engineering. Validity of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e5bf72b36d3dd2c90d923ec244d237
https://doi.org/10.1149/1.3117399
https://doi.org/10.1149/1.3117399
Autor:
Y. Tateshita, T. Hirano, Naoki Nagashima, Hitoshi Wakabayashi, Kaori Tai, Satoru Mayuzumi, Masanori Tsukamoto, Masashi Nakata, S. Yamaguchi, Shinya Yamakawa
Publikováno v:
IEEE Transactions on Electron Devices. 56:620-626
Newly proposed mobility-booster technologies are demonstrated for metal/high-k gate-stack n- and pMOSFETs. The process combination of top-cut SiN dual stress liners and damascene gates remarkably enhances local channel stress particularly for shorter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::563ff515998d9fbee79251e6cdd624aa
https://doi.org/10.1109/ted.2009.2014192
https://doi.org/10.1109/ted.2009.2014192
Publikováno v:
Journal of Computational Electronics. 7:244-247
In this work, we present a full band Monte Carlo simulation of the effects of dislocation scattering on the performance of a 0.25 μm AlGaN/GaN HEMT (high electron mobility transistor). We performed a full characterization of the device and validated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a321d63b15b2f02780a84847f0d9e45
https://doi.org/10.1007/s10825-008-0215-5
https://doi.org/10.1007/s10825-008-0215-5