Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Shinya Takashima"'
Autor:
Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface r
Externí odkaz:
https://doaj.org/article/872ed79336d94b0583d3cbbb01e7330f
Autor:
Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis of defects in GaN
Externí odkaz:
https://doaj.org/article/9c99db1d441f4045a868b455934596c7
Autor:
Takuya Yamashina, Yosei Kawamata, Hiroko Tsukada, Shinya Takashima, Yoichi Hiraki, Moeko Tsuruyama, Masahisa Nagano, Airi Fujimoto, Minako Tsuruta
Publikováno v:
Journal of Clinical Pharmacy and Therapeutics. 45:1143-1148
What is known and objective We investigated the elimination efficiency and pharmacokinetics (PK) parameters of vancomycin (VCM) in patients undergoing continuous haemodiafiltration (CHDF) using a polyethyleneimine-coated polyacrylonitrile membrane (A
Autor:
Kohei Shima, Akira Uedono, Shoji Ishibashi, Katsunori Ueno, Masaharu Edo, Kazunobu Kojima, Shinya Takashima, Ryo Tanaka, Shigefusa F. Chichibu
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Scientific Reports
Scientific Reports
A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface region (
Autor:
Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Shinya Takashima, Akira Uedono, Tomohiro Yamaguchi, Tohru Honda, Takeyoshi Onuma
Publikováno v:
Journal of Crystal Growth. 511:15-18
Both structure of the valence band maximum (VBM) and deep-level defects for box-profile Mg-ion implanted (4 × 1019 cm−3) GaN samples are characterized by photothermal deflection spectroscopy (PDS). Compared with the results evaluated by positron a
Autor:
Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono
Publikováno v:
Journal of Applied Physics. 131:185701
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; however, conventional annealing leads to the formation of numerous Mg-enriched defects, which result in inefficie
Autor:
K. Ueno, Shoji Ishibashi, Kohei Shima, Masaharu Edo, Kazunobu Kojima, Akira Uedono, Shinya Takashima, Ryo Tanaka, Shigefusa F. Chichibu
Publikováno v:
Applied Physics Letters. 119:182106
To accelerate the development of GaN power devices, reproducible fabrication of p-type GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area doping is preferred. In this Letter, the results of time-resolved photoluminescence (PL)
Autor:
Yoshihiro Irokawa, Ashutosh Kumar, Toshihide Nabatame, Masaharu Edo, Koji Kimoto, Toru Hara, Yasuo Koide, Katsunori Ueno, Kazutaka Mitsuishi, Shinya Takashima
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis of defects in GaN layers on
Publikováno v:
Japanese Journal of Applied Physics. 60:056503
We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three different surface treatments ((I) no treatment (as-grown), (II) alkaline solution, and (III) HCl related solution) before and after po
Autor:
Takashi Sekiguchi, Masaharu Edo, Kazuhiro Hono, Ryo Tanaka, Tadakatsu Ohkubo, Ashutosh Kumar, Jun Uzuhashi, Wei Yi, Shinya Takashima, Jun Chen
Publikováno v:
Journal of Applied Physics. 128:065701
Efficient acceptor activation in gallium nitride (GaN) achieved through Mg ion-implantation depends mainly on the concentration of implanted Mg ions and the post-implantation annealing process. In this study, we conducted correlative scanning transmi