Growth of high-quality $> 10\ \boldsymbol{\mu} \mathbf{m}$-thick GaN-on-Si with low-dislocation density in the order of 107/cm2

Autor: Hajime Nago, Toshiyuki Oka, Jumpei Tajima, Shinya Nunoue, Toshiki Hikosaka

Publikováno v: 2019 Compound Semiconductor Week (CSW).

Epitaxial growth of GaN on Si substrates has been regarded as attractive technology to realize low-cost GaN-based optical and electronic devices. With regard to the practical application of GaN-on-Si, fabrication of thick-GaN layer with low-threading

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::28d5f05ef25dc9915463d27db292cd24
https://doi.org/10.1109/iciprm.2019.8819020

Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers.

Autor: Shigeya Kimura, Hisashi Yoshida, Kenjiro Uesugi, Toshihide Ito, Aoi Okada, Shinya Nunoue

Publikováno v: Journal of Applied Physics; 2016, Vol. 120 Issue 11, p113104-1-113104-12, 12p, 1 Color Photograph, 2 Black and White Photographs, 2 Charts, 9 Graphs

Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

Autor: Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Shinya Nunoue, Masahiko Kuraguchi, Jumpei Tajima, Aya Shindome, Toshiki Hikosaka, Daimotsu Kato

Publikováno v: Japanese Journal of Applied Physics. 59:SGGD13

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::107920eef68e679dcdbc81467a21d0ce
https://doi.org/10.35848/1347-4065/ab6b7f

Schottky barrier height modulation at metal/n-GaN interface by BCl3/Ar plasma treatment

Autor: Toshihide Ito, Shinya Nunoue

Publikováno v: physica status solidi (b). 252:1011-1016

When n-GaN surface is treated by BCl3/Ar plasma, the Schottky barrier height (SBH) of Pt, Ni, or Ag/n-GaN is decreased, whereas that of Al/n-GaN is increased. The slope parameter is decreased by the BCl3/Ar plasma treatment, indicating that the Fermi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::370f7137dd0c2baff8d90b33e8c0f35f
https://doi.org/10.1002/pssb.201451577

High‐efficiency yellow light‐emitting diodes grown on sapphire (0001) substrates

Autor: Shinya Nunoue, Jongil Hwang, Rei Hashimoto, Shinji Saito

Publikováno v: physica status solidi c. 11:628-631

High-efficiency yellow InGaN-based light-emitting diodes (LEDs) were grown by metal-organic chemical vapor deposition on conventional c-plane sapphire (0001) substrates. Optimization of the growth temperature of barrier layers eliminated surface incl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4962fb07573b17d78ecad2efb916fcc
https://doi.org/10.1002/pssc.201300433