Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Autor: Heajeong Cheong, Shintaro Ogura, Hirobumi Ushijima, Manabu Yoshida, Nobuko Fukuda, Sei Uemura

Publikováno v: AIP Advances, Vol 5, Iss 6, Pp 067127-067127-8 (2015)

We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating

Externí odkaz: https://doaj.org/article/865f0bdabd9545419dc14c756db0a3eb

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Autor: Asko Sneck, Shintaro Ogura, Nobuko Fukuda, Jaakko Leppäniemi, Hirobumi Ushijima, Yasuyuki Kusaka, Ari Alastalo, Naoki Shirakawa

Publikováno v: Kusaka, Y, Shirakawa, N, Ogura, S, Leppäniemi, J, Sneck, A, Alastalo, A, Ushijima, H & Fukuda, N 2018, ' Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication ', ACS Applied Materials & Interfaces, vol. 10, no. 29, pp. 24339-24343 . https://doi.org/10.1021/acsami.8b07465

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caf1b562566760a2fec52c644f3295d6
https://pubmed.ncbi.nlm.nih.gov/29972298

Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor

Autor: Manabu Yoshida, Shintaro Ogura, Nobuko Fukuda, Hea Jeong Cheong, Hirobumi Ushijima, Sei Uemura

Publikováno v: Journal of Photopolymer Science and Technology. 28:353-355

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::824b61693bb66b06b891106c9a96986e
https://doi.org/10.2494/photopolymer.28.353

Effects of Drying Temperature on Surface Morphology and Electric Behavior of IGZO Thin Film Prepared by Solution Process

Autor: Nobuko Fukuda, Shintaro Ogura, Koji Abe, Hirobumi Ushijima

Publikováno v: MRS Proceedings. 1731

We have achieved a drastic improvement of the performance as thin film transistor (TFT) for solution-processed IGZO thin film by controlling drying temperature of solvents containing the precursor solution. The IGZO-precursor solution was prepared by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19f8c707c6fe9d023852c550f6009c2f
https://doi.org/10.1557/opl.2015.267

Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor

Autor: Shintaro Ogura, Nobuko Fukuda, Sei Uemura, Heajeong Cheong, Hirobumi Ushijima

Publikováno v: Flexible and Printed Electronics. 1:045001

We designed an aqueous-fluoroalcoholic InGaZnO precursor for obtaining thin-film transistors (TFTs) on a flexible plastic film by spin-coating and low-temperature annealing processes without inert gas conditions. The precursor shows a low surface ten

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8eba7b3b5605d8c14df4f3c5d8c74d8f
https://doi.org/10.1088/2058-8585/1/4/045001