Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shinsaku Kawabata"'
Publikováno v:
IEEE Electron Device Letters. 41:693-696
We report on an Al2O3 /AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After analyzing the possibility of obtaining high threshold voltage ( ${V}_{\text {th}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc103fd53946c76f4f4cd5f58e6ddf20
https://doi.org/10.1109/led.2020.2985091
https://doi.org/10.1109/led.2020.2985091
Autor:
Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys, Tetsu Kachi, Boguslawa Adamowicz, Akio Wakejima, Masaaki Kuzuhara, Akio Yamamoto, Joel T. Asubar
Publikováno v:
Applied Physics Express. 15:104002
We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al2O3/AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f5a76d3f9560b4dc9a2993a5a8b937b
https://doi.org/10.35848/1882-0786/ac8f13
https://doi.org/10.35848/1882-0786/ac8f13
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We investigated the effect of SiN capping of the AlGaN surface during ohmic annealing process on the performance of AlGaN/GaN HEMTs. In comparison with the devices without any capping, devices with SiN capping exhibited small variation in threshold v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa949cb461b7596b750fa44bc2e679d6
https://doi.org/10.1109/imfedk48381.2019.8950755
https://doi.org/10.1109/imfedk48381.2019.8950755
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We investigated the effect of AlGaN regrown layer on the device characteristics of Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). From capacitance-voltage (C-V) investigations, it was confirmed that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876aecb6430feb688417cf8831ecf6af
https://doi.org/10.1109/iciprm.2019.8819286
https://doi.org/10.1109/iciprm.2019.8819286
Autor:
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Rui, Shan Low, Joel T., Asubar, Ali, Baratov, Shunsuke, Kamiya, Itsuki, Nagase, Shun, Urano, Shinsaku, Kawabata, Hirokuni, Tokuda, Masaaki, Kuzuhara, Yusui, Nakamura, Kenta, Naito, Tomohiro, Motoyama, Zenji, Yatabe
Publikováno v:
Applied Physics Express = Applied Physics Express. 14(3):031004
We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61df7cdc155354941faf8b74b4fce502
http://hdl.handle.net/2298/00044023
http://hdl.handle.net/2298/00044023