Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Shinn-Tyan Wu"'
Publikováno v:
Surface and Coatings Technology. 201:4850-4853
Epitaxial growth of a titanium nitride (TiN) on (6H)-SiC (0001) is achieved at room temperature by means of direct current magnetron sputtering. The epitaxial relationship is established by X-ray pole figure and Φ-scan. Cross-sectional transmission
Autor:
Song-Yeu Tsai, I-Cherng Chen, Yan-Ru Lin, ‡ and Shinn-Tyan Wu, Shang-Shian Yang,†,‡, ‡ Hao-Cheng Hsu
Publikováno v:
Crystal Growth & Design. 6:1951-1955
Zinc oxide (ZnO) nanowire (NW) was grown on a ZnO-buffered silicon substrate by a hydrothermal method in an aqueous solution that contained methenamine (C6H12N4) and zinc nitrate hexahydrate (Zn(NO3)2·6H2O). The concentration of the zinc nitrate is
Publikováno v:
Materials Chemistry and Physics. 92:146-151
In this work, SiC particles were incorporated into nickel phosphorus (Ni–P) alloy matrix by direct current plating and the effects of current density and SiC concentration on the compositions and the microhardness of the Ni–P–SiC deposits were
Autor:
Shinn-Tyan Wu, Yung-Kuan Tseng, Shang-Shian Yang,†,‡, I-Cherng Chen, Shoou-Jinn Chang, Yan-Ru Lin, Cheng-Liang Hsu
Publikováno v:
The Journal of Physical Chemistry B. 108:18799-18803
One-dimensional semiconductor nanomaterials are expected to be important components in future nano-devices. The well-controlled growth of the nanomaterials is the most important aspect of nano-devices production. A new and simple means of growing ZnO
Autor:
Shinn Tyan Wu, Shoou-Jinn Chang, Yan-Ru Lin, Yung Kuan Tseng, Shang Shian Yang, Cheng-Liang Hsu
Publikováno v:
Crystal Growth & Design. 5:579-583
This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium n
Autor:
Yan-Ru Lin, Shinn-Tyan Wu
Publikováno v:
Journal of Crystal Growth. 252:433-439
The epitaxial growth of aluminum nitride films on Al 2 O 3 (0 0 0 1) by sputtering is achieved using a 30 nm thick buffer layer of aluminum and titanium nitride. Both buffer layers facilitate epitaxial growth. In particular, an epitaxial film can be
Publikováno v:
Materials Chemistry and Physics. 78:59-66
Amorphous iron–tungsten–carbon film Fe79W21Cx is prepared by direct current electroplating. Annealing in hydrogen atmosphere at temperature higher than 400 °C results in the crystallization of the film. Diffraction experiments identify the cryst
Publikováno v:
Japanese Journal of Applied Physics. 42:208-212
Epitaxial growth of a titanium nitride film on sapphire is achieved at room temperature by means of reactive sputtering. An exceptionally low full-width at half maximum (FWHM) from the X-ray rocking curve of 0.07° (252 arcsec) is measured for the fi
Autor:
Yan-Ru Lin, Shinn-Tyan Wu
Publikováno v:
Surface Science. 516:L535-L539
Aluminum nitride (AlN) was deposited on Al2O3(0 0 0 1) by direct current magnetron sputtering. It was discovered that the nitride could grow epitaxially near room temperature. A FWHM of 2° was obtained from X-ray rocking curve. A thin compliant buff
Autor:
Shinn-Tyan Wu, Chia-Fan Chu
Publikováno v:
Materials Chemistry and Physics. 71:248-254
Thermogravimetric analyzer (TGA) under the influence of a static magnetic field and alternating gradient field magnetometer (AGFM) were applied to study the magnetic properties of electroplated film Co 76 Mo 18 Ni 6 . The film was amorphous before th