Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shinji Yasue"'
Autor:
Kosuke Sato, Yuya Ogino, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Shinji Yasue, Satoshi Kamiyama
Publikováno v:
2019 Compound Semiconductor Week (CSW).
An optimized graded p-AlGaN in which average AlN molar fraction is 0.55 was used for p-type layer in ultraviolet (UV)-B light emitting device. The maximum current density at 20 kA/cm2 was achieved by optimizing graded p-AlGaN structure especially in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f54bbc21d7b19971928dcb7263a1262
https://doi.org/10.1109/iciprm.2019.8819180
https://doi.org/10.1109/iciprm.2019.8819180
Autor:
Sayaka Ishizuka, Yuya Ogino, Motoaki Iwaya, Isamu Akasaki, Shohei Teramura, Sho Iwayama, Shinji Yasue, Tomoya Omori, Hideto Miyake, Satoshi Kamiyama, Kazuki Yamada, Shunya Tanaka, Kosuke Sato, Tetsuya Takeuchi
Publikováno v:
Applied Physics Express. 13:071008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9124d4d4db785d1b1961d01e62a60383
https://doi.org/10.35848/1882-0786/ab9e4a
https://doi.org/10.35848/1882-0786/ab9e4a
Autor:
Satoshi Kamiyama, Shunya Tanaka, Motoaki Iwaya, Isamu Akasaki, Shinji Yasue, Kosuke Sato, Tetsuya Takeuchi, Yuya Ogino
Publikováno v:
Journal of Crystal Growth. 535:125537
We investigated the effects of Si and Mg doping concentrations in the guide layers on the threshold power density of an AlGaN-based optically pumped ultraviolet-B band (UV-B) laser. For Si, a decrease in the threshold power density required for laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0acdd4892e00c8782289db091e88d2ac
https://doi.org/10.1016/j.jcrysgro.2020.125537
https://doi.org/10.1016/j.jcrysgro.2020.125537
Autor:
Yuta Kawase, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Kosuke Sato, Tetsuya Takeuchi, Isamu Akasaki, Shinji Yasue, Tomoya Omori, Shunya Tanaka, Shohei Teramura, Hideto Miyake
Publikováno v:
Applied Physics Express. 13:045504
We investigated the dependence of the lasing threshold power density, optical gain, and internal loss on the dislocation density of an optically pumped AlGaN-based ultraviolet-B band laser. Reducing the dislocation density was found to not only incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7540f9228732fc50c5f25cc44eeba4c4
https://doi.org/10.35848/1882-0786/ab7caf
https://doi.org/10.35848/1882-0786/ab7caf
Autor:
Isamu Akasaki, Shinji Yasue, Motoaki Iwaya, Shunya Tanaka, Kazuki Yamada, Tomoya Omori, Yuya Ogino, Satoshi Kamiyama, Sho Iwayama, Hideto Miyake, Kosuke Sato, Tetsuya Takeuchi, Sayaka Ishizuka, Shohei Teramura
Publikováno v:
Applied Physics Express. 13:031004
An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse operation. The laser diode has a lattice-relaxed Al0.6Ga0.4N layer from the underlying AlN/sapphire template and a composition-graded p-AlGaN cladding layer. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bfb4755dc44bf03b62689e3e9101b52
https://doi.org/10.35848/1882-0786/ab7711
https://doi.org/10.35848/1882-0786/ab7711
Autor:
Satoshi Kamiyama, Yuya Ogino, Isamu Akasaki, Shinji Yasue, Kosuke Sato, Tetsuya Takeuchi, Motoaki Iwaya
Publikováno v:
physica status solidi (a). 217:1900864
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b47812281b6b2a171af4152a2876698
https://doi.org/10.1002/pssa.201900864
https://doi.org/10.1002/pssa.201900864
Autor:
Yuta Kawase, Motoaki Iwaya, Kosuke Sato, Tetsuya Takeuchi, Yusuke Sakuragi, Isamu Akasaki, Satoshi Kamiyama, Shinji Yasue, Sho Iwayama, Junya Ikeda
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCC30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bff19468c5843a1d37adf57c0727f01
https://doi.org/10.7567/1347-4065/ab112a
https://doi.org/10.7567/1347-4065/ab112a
Autor:
Tetsuya Takeuchi, Yuta Kawase, Satoshi Kamiyama, Motoaki Iwaya, Yusuke Sakuragi, Sho Iwayama, Hideto Miyake, Isamu Akasaki, Shinji Yasue, Syunya Ikeda
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1052
In this paper, we investigated the dependence of threshold power density on the Al0.55Ga0.45N underlying layer film thickness in ultraviolet-B band (UV-B) lasers on various AlN wafers (four types). We also prepared and compared AlN templates for AlN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79d8b4428b5fb7001fac0b3ca9ea33f
https://doi.org/10.7567/1347-4065/ab0d04
https://doi.org/10.7567/1347-4065/ab0d04
Autor:
Motoaki Iwaya, Satoshi Kamiyama, Shunya Tanaka, Kosuke Sato, Yuya Ogino, Tetsuya Takeuchi, Isamu Akasaki, Shinji Yasue
Publikováno v:
Applied Physics Letters. 114:191103
In this study, we investigated laser characteristics via photoexcitation and electro-optical characteristics via current injection in ultraviolet (UV)-B laser diodes. To achieve light confinement and high current injection, an Al composition-graded 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afacbe674766add983444b3faa2a41b3
https://doi.org/10.1063/1.5095149
https://doi.org/10.1063/1.5095149
Autor:
Kosuke Sato, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki, Shinji Yasue, Yuya Ogino, Satoshi Kamiyama
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1016
The relaxation ratio of p-GaN/p-AlGaN superlattices was controlled by using different AlGaN underlying layers and the effects of relaxation on the electrical properties were investigated. High hole concentrations over 1 × 1018 cm−3 at room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b54eddf11077f9ce651603db55e998c
https://doi.org/10.7567/1347-4065/ab07a3
https://doi.org/10.7567/1347-4065/ab07a3