Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shinji Wakamoto"'
Autor:
Seemoon Park, Shinji Wakamoto, Taro Sugihara, Tomoyuki Matsuyama, Kazuo Masaki, Hirotaka Kono, Yuichi Shibazaki
Publikováno v:
SPIE Proceedings.
Along with device shrinkage, higher accuracy will continuously be required from photo-lithography tools in order to enhance on-product yield. In order to achieve higher yield, the advanced photo-lithography tools must be equipped with sophisticated t
Publikováno v:
SPIE Proceedings.
This paper investigates the possibility of 193 nm immersion lithography extensions to sub-10 nm technology nodes using the patterning scheme of unidirectional (1D) grating lines and cuttings. Technological feasibility down to 5 nm nodes is examined w
Autor:
Park Hongki, Takahisa Kikuchi, Nobuyuki Takahashi, Shinji Wakamoto, Akiko Mori, Katsushi Makino, Satoru Sasamoto
Publikováno v:
SPIE Proceedings.
Current technology nodes, as well as subsequent generations necessitate ongoing improvements to the mix-and-match overlay (MMO) capabilities of lithography scanners. This work will introduce newly developed scanner solutions to address this requireme
Autor:
Yuuji Shiba, Shinji Wakamoto, Masahiko Yasuda, Yosuke Shirata, Takahisa Kikuchi, Shinya Takubo, Yuuki Ishii, Hiroto Imagawa
Publikováno v:
SPIE Proceedings.
To achieve the 2 nm overlay accuracy required for double patterning, we have introduced the NSR-S620D immersion scanner that employs an encoder metrology system. The key challenges for an encoder metrology system include its stability as well as the
Autor:
Yosuke Shirata, Yuho Kanaya, Yuuki Ishii, Hisashi Nishinaga, Noriaki Kasai, Junichi Kosugi, Kenichi Shiraishi, Shinji Wakamoto
Publikováno v:
SPIE Proceedings.
Double patterning requires extremely high accuracy in overlay and high uniformity in CD control. For the 32 nm half pitch, the CDU budget requires less than 2 nm overlay and less than 2 nm CD uniformity for the exposure tool. To meet these requiremen
Autor:
Sébastien Barnola, Nobutaka Magome, Shinji Wakamoto, Andrew J. Hazelton, Céline Lapeyre, Vincent Salvetat, Guillaume Jullien, Akira Tokui
Publikováno v:
SPIE Proceedings.
The problem of the alignment tree for double patterning (DP) is presented. When the 2nd DP exposure is aligned to the underlying zero layer, the space CD uniformity is shown to be well outside the budget for the 32 nm HP node. Aligning the 2nd DP lay
Autor:
Dongsub Choi, Yuuki Ishii, Shinji Wakamoto, John C. Robinson, Atsuhiko Kato, Shinroku Maejima, Koji Yasukawa
Publikováno v:
SPIE Proceedings.
Critical processing factors in the lithography process include overlaying the pattern properly to previous layers and properly exposing the pattern to achieve the desired line width. Proper overlay can only be attained in the lithography process whil
Autor:
Shinji Wakamoto, Andrew J. Hazelton, Céline Lapeyre, Sébastien Barnola, Shigeru Hirukawa, Isabelle Guilmeau, Nobutaka Magome, Jun Ishikawa, Stéphanie Gaugiran, Martin McCallum
Publikováno v:
Optical Microlithography XXI.
Double patterning (DP) has now become a fixture on the development roadmaps of many device manufacturers for half pitches of 32 nm and beyond. Depending on the device feature, different types of DP and double exposure (DE) are being considered. This
Autor:
Koji Yasukawa, Michael E. Adel, Ayako Sukegawa, Shinji Wakamoto, Shinroku Maejima, Brad Eichelberger, John C. Robinson, Pavel Izikson, Yuuki Ishii, Atsuhiko Kato
Publikováno v:
SPIE Proceedings.
As Moore's Law drives CD smaller and smaller, overlay budget is shrinking rapidly. Furthermore, the cost of advanced lithography tools prohibits usage of latest and greatest scanners on non-critical layers, resulting in different layers being exposed
Publikováno v:
SPIE Proceedings.
Overlay accuracy is a key issue in semiconductor manufacturing process. In the ITRS roadmap also, overlay budgets are being reduced at a rapid pace. Coupled with the decreasing technology node budget allowances, alternative processing techniques are