Zobrazeno 1 - 10
of 266
pro vyhledávání: '"Shinji Migita"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Publikováno v:
AIP Advances, Vol 11, Iss 1, Pp 015216-015216-6 (2021)
Lateral variations of the surface electric potential and the elastic properties of ultrathin HfxZr1−xO2 films have strong impact on the performance of lead-free ferroelectric devices. Here, we compared lateral uniformity of electric and elastic pro
Externí odkaz:
https://doaj.org/article/7e9a77a6e92b4647a10724a8b65b3333
Autor:
Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 153-167 (2014)
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SC
Externí odkaz:
https://doaj.org/article/3e635bb4b22f44f3b06ee54bc2dd1256
Autor:
Kazuhiko Endo, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin-ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi, Meishoku Masahara
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 110-118 (2014)
A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coup
Externí odkaz:
https://doaj.org/article/68c0115a793444148a5edf8eb43e28f1
Autor:
Shinji Migita
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Publikováno v:
Nonlinear Theory and Its Applications, IEICE. 11:145-156
Autor:
null Mohit, Yuli Wen, Yuki Hara, Shinji Migita, Hiroyuki Ota, Yukinori Morita, Keisuke Ohdaira, Eisuke Tokumitsu
Publikováno v:
Japanese Journal of Applied Physics. 61:SH1004
Effects of catalytically generated atomic hydrogen (Cat-H) treatment on electrical properties of 10 nm thick sputtered hafnium-zirconium-oxide (HZO) films have been investigated. It is demonstrated that the Cat-H treatment to the as-deposited sputter
Autor:
Leonid Bolotov, Shinji Migita, Ryouta Fujio, Manabu Ishimaru, Shogo Hatayama, Noriyuki Uchida
Publikováno v:
Microelectronic Engineering. 258:111770
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1070
Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 thin films have been investigated on a metal–ferroelectric–metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In the current–voltage (I–V) measurement
Autor:
Shinji Migita
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
The discovery of ferroelectric HfO 2 crystal phase has brought a great impact on the electronic devices society. Since then, various challenges of memory and logic applications using this material are ongoing. These device technologies equipped on LS