Zobrazeno 1 - 10
of 790
pro vyhledávání: '"Shinichi Takagi"'
Autor:
Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric mate
Externí odkaz:
https://doaj.org/article/badef8bee75141ac8d5b40577bf33197
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 216-229 (2023)
Electron mobility in extremely-thin-body (ETB) nanosheet channels and at cryogenic temperature is known to be dominated by surface roughness scattering. However, the conventional model of surface roughness scattering lacks accuracy because it require
Externí odkaz:
https://doaj.org/article/81e6fa2d72d5467dbfdde78eb170d7a4
Autor:
Takaya Ochiai, Tomohiro Akazawa, Yuto Miyatake, Kei Sumita, Shuhei Ohno, Stéphane Monfray, Frederic Boeuf, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The authors presented an ultrahigh-responsivity phototransistor with a thin InGaAs film on a silicon waveguide. The effective gating by the silicon waveguide enables 106 A/W responsivity, promising for optical power monitors in Si photonic circuits.
Externí odkaz:
https://doaj.org/article/2e324ff428594134920261e1431a448f
Publikováno v:
AIP Advances, Vol 13, Iss 5, Pp 055310-055310-6 (2023)
The specific contact resistance ρint of the InAs/Ni–InAs interface was evaluated by the multi-sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and InAs-on-insulator substrates. The revised test structure for MST
Externí odkaz:
https://doaj.org/article/16b83e09822f46cd8c88f9db4e7d5f2e
Publikováno v:
Frontiers in Electronics, Vol 3 (2022)
Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the gate current and breakdown characteristics of Hf0.5Zr0.5O2/Si ferroel
Externí odkaz:
https://doaj.org/article/372ff045bfb8482eb438590dfc8cb47c
Autor:
Cheol-Min Lim, Ziqiang Zhao, Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 612-617 (2021)
We have systematically examined electrical characteristics of ultra-thin body (UTB) (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) fabricated by the smart-cut process and have compared their electr
Externí odkaz:
https://doaj.org/article/e51415e908564dd799aec2f6595ccb0f
Autor:
Roda Nur, Takashi Tsuchiya, Kasidit Toprasertpong, Kazuya Terabe, Shinichi Takagi, Mitsuru Takenaka
Publikováno v:
Communications Materials, Vol 1, Iss 1, Pp 1-9 (2020)
MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge a
Externí odkaz:
https://doaj.org/article/41ed3dedf80d438b9abe08ec480e6d8d
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 2, Pp 1-7 (2020)
We demonstrate a tunable band-stop optical filter on a germanium-on-insulator photonic platform operating at 1.95 μm wavelength. The band-stop filter is implemented using parallel-coupled microring resonators with the number of microring resonators
Externí odkaz:
https://doaj.org/article/fd80295569c444b894e5b7587f86abcb
Autor:
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Takahiro Mori, Yukinori Morita, Takashi Matsukawa, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 341-345 (2020)
We have examined impacts of gate insulator (Al2O3 or HfO2) and gate electrode (TiN or W) on electrical performance of ZnSnO/Si bilayer tunneling field-effect transistors (TFETs). It is found from the capacitance-voltage (C-V) characteristics that the
Externí odkaz:
https://doaj.org/article/2fe5badc75f94a6cb017f287af926196
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085021-085021-5 (2021)
We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconductor (MOS) interface properties of Si0.78Ge0.22 gate stacks with TiN gate electrodes and the physical origins of the reduction in MOS interface defe
Externí odkaz:
https://doaj.org/article/61a47699e843425c9a788b872a342303