Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shinichi Sezaki"'
Publikováno v:
Journal of Ion Exchange. 16:157-163
半導体製造に不可欠な超純水は近年超高純度な水質が要求されるとともに, その使用量が大量であるため, 環境問題やコストと相まっていろいろな技術が応用駆使されている。その中でも
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1ec8c3ce62b67b6a8ae5d9d90a0defc
https://doi.org/10.5182/jaie.16.157
https://doi.org/10.5182/jaie.16.157
Autor:
Jason Reyes, Kouhei Tanaka, Nariaki Hamamoto, Noriaki Maehara, Hiroshi Onoda, Yuji Koga, Yoshiki Nakashima, Shinichi Sezaki, Tsutomu Nagayama, S. Prussin, Yasunori Kawamura, Yoshikazu Hashino, Shigeki Sakai, Hideki Yoshimi, Masayasu Tanjyo, Masahiro Hashimoto, Sei Umisedo
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Cluster C implantation at low temperature has been studied in terms of amorphous Si (a-Si) formation and elimination of B implanted induced end of range defects (EORDs). Thickness of a-Si can be controlled by C equivalent energy and dose. Monomer C n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85e50c0dca161a0cb29088e1a7e99
https://doi.org/10.1109/rtp.2010.5623605
https://doi.org/10.1109/rtp.2010.5623605
Autor:
Tsutomu Nagayama, Sei Umisedo, Masahiro Hashimoto, Michael I. Current, Masayasu Tanjyo, Jason Reyes, Yasunori Kawamura, Shinichi Sezaki, Hiroshi Onoda, Yuji Koga, Yoshiki Nakashima, Noriaki Maehara, N. Hamamoto, S. Prussin, Hideki Yoshimi
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the R s ·x j figure of merit. Differential Hall effect evaluations are used to measure 1/µ def , the defect scatter contribution to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2818330abeeb4bf7e556e8c8c860c1
https://doi.org/10.1109/rtp.2010.5623787
https://doi.org/10.1109/rtp.2010.5623787
Autor:
Sei Umisedo, Masayasu Tanjyo, Hiroshi Onoda, Yoshiki Nakashima, Noriaki Maehara, K. Kawakami, S. Prussin, Yasunori Kawamura, Masahiro Hashimoto, Nariaki Hamamoto, Shinichi Sezaki, Tsutomu Nagayama, Hideki Yoshimi, Jason Reyes
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
Boron retained dose and carrier activation after spike RTA in Cluster B 18 + (Octadecaborane : B 18 H 11 +) implanted Si have been investigated comparing with BF 2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6e67725aaf3573073c44205a106a4b
https://doi.org/10.1109/iwjt.2010.5474917
https://doi.org/10.1109/iwjt.2010.5474917
Autor:
Nariaki Hamamoto, Hideki Yoshimi, Nobuo Nagai, Yoshikazu Hashino, Masayasu Tanjyo, Sei Umisedo, Masahiro Hashimoto, Yoshiki Nakashima, Yasunori Kawamura, Hiroshi Onoda, Tsutomu Nagayama, Shinichi Sezaki, Yuji Koga, Noriaki Maehara
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
Phosphorus transient enhanced diffusion (TED) is caused by interstitial diffusion mechanism. It is important for the efficient suppression of phosphorus diffusion that some carbons could be located on lattice point in the initial stage of re-growth d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001a7b3fb85dd39b1f7514b5e3ff0075
https://doi.org/10.1109/iwjt.2010.5474979
https://doi.org/10.1109/iwjt.2010.5474979