Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shinichi Kanna"'
Publikováno v:
Journal of Photopolymer Science and Technology. 21:685-690
A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patt
Autor:
Shinichi Kanna, Morio Yagihara, Tadayoshi Kokubo, Sanjay Malik, Kazuyoshi Mizutani, Stephanie Dilocker, Shoichiro Yasunami, Shiro Tan, Yasumasa Kawabe
Publikováno v:
Journal of Photopolymer Science and Technology. 16:595-600
Resist materials for 157 nm lithography is believed to be one of the key technology for producing patterns below 70 nm. Many different types of fluorine-containing polymer platforms have been energetically pursued by a number of researchers, and some
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patt
Publikováno v:
SPIE Proceedings.
The technology of 193nm immersion lithography has been progressing rapidly toward half-pitch 45 nm generation device manufacturing. However, some intrinsic issues, the photoacid leaching and the watermark defect have remained in the immersion process
Autor:
Kazuyoshi Mizutani, Hiromi Kanda, Kei Yamamoto, Shinichi Kanna, Shinji Tarutani, Kazuyuki Kitada, Shinji Uno, Haruki Inabe, Yasumasa Kawabe
Publikováno v:
SPIE Proceedings.
The interfacial mass transfer issues of resist components in ArF immersion lithography were investigated both for topcoat resist system and for non-topcoat resist system. PAGs and photoacids are known for the major components that leach out from the
Autor:
Yasumasa Kawabe, Makoto Momota, Shinichi Kanna, Kunihiko Kodama, Fumiyuki Nishiyama, Tadayoshi Kokubo, Kenichiro Sato, Hyou Takahashi, Shiro Tan, Tsukasa Yamanaka
Publikováno v:
SPIE Proceedings.
Transparency of the resist film at exposure wavelength affects lithographic performances, such as sensitivity, profile and resolution. Not only binder polymer, but also photo acid generator (PAG) itself has a significant impact on transparency of the
Autor:
Morio Yagihara, Stephanie Dilocker, Shiro Tan, Sanjay Malik, Tadayoshi Kokubo, Shinichi Kanna, Shoichiro Yasunami, Kazuyoshi Mizutani, Yasumasa Kawabe
Publikováno v:
Advances in Resist Technology and Processing XX.
Resist materials for 157nm lithography is believed to be one of the key technology for producing patterns below 70nm. Many different types of fluorine-containing polymer platforms have been energetically pursued by a number of researchers, and some o
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.