Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shinichi Hatakeyama"'
Publikováno v:
Materials Science and Engineering: A. 725:8-18
Reverse loading from compression to tension was performed on a rolled AZ31 magnesium alloy sheet to systematically study the effects of twinning and detwinning on the stress and strain behaviors after stress reversal. A crystal plasticity finite-elem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9708e428ed15b1d5fe358d02939deb1f
https://doi.org/10.1016/j.msea.2018.03.124
https://doi.org/10.1016/j.msea.2018.03.124
Autor:
Roel Gronheid, Sophie Bernard, Alessandro Vaglio Pret, Benjamin Rathsack, Kathleen Nafus, Shinichi Hatakeyama
Publikováno v:
Journal of Photopolymer Science and Technology. 22:97-104
High NA immersion and EUV lithography processes are challenged to meet stringent control requirements for the 22nm node and beyond. Lithography processes must balance resolution, LWR and sensitivity (RLS) performance tradeoffs while scaling resist th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5784d8f8fbcc0ea7b990647aaeeba317
https://doi.org/10.2494/photopolymer.22.97
https://doi.org/10.2494/photopolymer.22.97
Autor:
Takayuki Hama, Tomotaka Suzuki, Hitoshi Fujimoto, Hirohiko Takuda, Shinichi Hatakeyama, Sohei Uchida
Publikováno v:
The Proceedings of the Materials and processing conference. :712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97be776c6ad3a84ee2d73c5714dd8ba2
https://doi.org/10.1299/jsmemp.2016.24.712
https://doi.org/10.1299/jsmemp.2016.24.712
Autor:
Tetsu Kawasaki, Masato Kushibiki, Eiichi Nishimura, Arisa Hara, Junichi Kitano, Shinichi Hatakeyama, Hideo Shite, Satoru Shimura, Kathleen Nafus, Shinji Kobayashi, Roel Gronheid, Alessandro Vaglio-Pret
Publikováno v:
SPIE Proceedings.
The reduction of line width roughness (LWR) is a critical issue in developing resist materials for EUV lithography and LWR represents a trade-off between sensitivity and resolution. Additional post pattern processing is expected as an LWR reduction t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::609269a7a9789f77f975b6cdb6536c97
https://doi.org/10.1117/12.846318
https://doi.org/10.1117/12.846318
Autor:
Shaunee Cheng, Shinichi Hatakeyama, Philippe Leray, Kathleen Nafus, Josh Hooge, Philippe Foubert, Steven Scheer
Publikováno v:
SPIE Proceedings.
Determination of the optimal double patterning scheme depends on cost, integration complexity, and performance. This paper will compare the overall CDU performance of litho-etch-litho-etch (LELE) versus a spacer approach. The authors use Monte Carlo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f22d8645a5943cf8f3629df28a88ef
https://doi.org/10.1117/12.814332
https://doi.org/10.1117/12.814332
Autor:
Junichi Kitano, Heiko Weichert, Mieke Goethals, Jan Hermans, Shinichi Hatakeyama, Neil Bradon, Kosuke Yoshihara, Kathleen Nafus, Hitoshi Kosugi
Publikováno v:
Alternative Lithographic Technologies.
As lithographic technology is moving from single pattern immersion processing for 45nm node to double patterning for the next generation and onward to EUV processing, TEL is committed to understanding the fundamentals and improving our technology to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79a21036e909a13081726d103b595de
https://doi.org/10.1117/12.814189
https://doi.org/10.1117/12.814189
Autor:
Yuhei Kuwahara, Benjamin Rathsack, Roel Gronheid, Junichi Kitano, Alessandro Vaglio Pret, Kathleen Nafus, Shinichi Hatakeyama
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
High NA immersion and EUV lithography processes are challenged to meet stringent control requirements for the 22 nm node and beyond. Lithography processes must balance resolution, LWR and sensitivity (RLS) performance tradeoffs while scaling resist t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5811fbe588e40c117047cfff94972987
https://doi.org/10.1117/12.814287
https://doi.org/10.1117/12.814287
Autor:
Wallace P. Printz, Takafumi Niwa, Mark Somervell, Steven Scheer, Kathleen Nafus, Sophie Bernard, Roel Gronheid, Shinichi Hatakeyama, Yuhei Kuwahara, Carlos Fonseca
Publikováno v:
SPIE Proceedings.
The ever-shrinking circuit device dimensions challenge lithographers to explore viable patterning for the 32 nm halfpitch node and beyond. Significant improvements in immersion lithography have allowed extension of optical lithography down to 45 nm n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30343ede0ebd98de6a71abdf1c0de4c7
https://doi.org/10.1117/12.814289
https://doi.org/10.1117/12.814289
Autor:
Yuichi Terashita, M. Blanco Mantecon, M. Jyousaka, Joerg Mallmann, S. Wang, Shinichi Hatakeyama, Hitoshi Kosugi, Raymond Maas, T. Otsuka, Kathleen Nafus, Masashi Enomoto, Takeshi Shimoaoki, Tsuyoshi Shibata, Jozef Maria Finders, E. van Setten, R. Naito, Carmen Zoldesi
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
In order to prepare for the next generation technology manufacturing, ASML and TEL are investigating the process manufacturability performance of the CLEAN TRACK TM LITHIUS Pro TM - i / TWINSCAN TM XT:1900Gi lithocluster at the 45nm node. Previous wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198decb713cb649ff1a6dcb68ee65b19
https://doi.org/10.1117/12.772552
https://doi.org/10.1117/12.772552
Autor:
Junichi Kitano, Eric Hendrickx, Shinichi Hatakeyama, Josh Hooge, Kathleen Nafus, Philippe Leray, Ben Rathsack, Phillipe Foubert, Roel Gronheid, Dieter Van Den Heuval, Steven Scheer, Hontake Kouichi
Publikováno v:
Optical Microlithography XXI.
As the industry extends immersion lithogr aphy to the 32 nm node, the limits of image and resist contrast will be challenged. Image contrast is limited by the inherent numerical aperture of a water based immersion lithography system. Elements of resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::675c2d2e569e6b7ee2c75cf9cb8964c6
https://doi.org/10.1117/12.772728
https://doi.org/10.1117/12.772728