Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shinhee Kim"'
Autor:
Shinhee Kim, Soondool Chung
Publikováno v:
Korean Journal of Social Welfare. 74:291-316
Autor:
Seungwon Go, Jae Yeon Park, Shinhee Kim, Hyung Ju Noh, Dong Keun Lee, So Ra Park, Sangwan Kim
Publikováno v:
2022 International Conference on Electronics, Information, and Communication (ICEIC).
Autor:
Seungwon Go, Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyung Ju Noh, So Ra Park, Yoon Kim, Dae Hwan Kim, Sangwan Kim
Publikováno v:
Solid-State Electronics. 198:108483
Publikováno v:
Japanese Journal of Applied Physics. 60:SCCE07
A recessed-channel tunnel field-effect transistor (RCTFET) with intrinsic Si layer between gate and source/drain is proposed and its electrical characteristics are examined by technology computer-aided design simulation for lower subthreshold swing (
Publikováno v:
Solid-State Electronics. 175:107956
Nanoelectromechanical (NEM) device has been regarded as one of the future switching devices due to its nearly infinite switching slope and zero off-state leakage current. However, it suffers from high pull-in voltage which causes high operation volta
Autor:
Shinhee Kim
Publikováno v:
Journal of Ethics. 1:287-313
Autor:
Hyunji Son, Sunjae Chung, Sun-young Yea, Shinhee Kim, Taehee Yoo, Sanghoon Lee, Liu, X., Furdyna, J. K.
Publikováno v:
Applied Physics Letters; 3/1/2010, Vol. 96 Issue 9, p092105, 3p, 1 Diagram, 1 Chart, 3 Graphs