Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Shingo TANIGUCHI"'
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075110-075110-4 (2021)
For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p–n-junction structures
Externí odkaz:
https://doaj.org/article/cf532e3b5a784bfbb0190303693c2f1d
Autor:
Kazuho Matsumoto, Kei Terasawa, Shingo Taniguchi, Mizue Ohashi, Ayumi Katayama, Tomonori Kume, Atsushi Takashima
Publikováno v:
Ecological Research. 38:479-490
Publikováno v:
Journal of the Japanese Society of Revegetation Technology. 48:156-159
Autor:
Hayato Abe, Ayumi Katayama, Shingo Taniguchi, Atsushi Takashima, Tomonori Kume, Kazuho Matsumoto
Publikováno v:
Ecological Research. 37:609-622
Publikováno v:
Mokuzai Gakkaishi. 68:43-52
Autor:
Kenji Ono, Kiyoshi Fujimoto, Yasumasa Hirata, Ryuichi Tabuchi, Shingo Taniguchi, Keita Furukawa, Shin Watanabe, Rempei Suwa, Saimon Lihpai
Publikováno v:
Ecological Research. 37:33-52
Autor:
Kyoji Furukawa, Sung Chul Park, Daiki Takahashi, Sunao Tokumaru, Tomoaki Okimoto, Kazuki Terashima, Masaki Suga, Shinichi Tanaka, Mikuni Takeda, Yusuke Demizu, Yoshiro Matsuo, Shingo Taniguchi, Itsumi Maehata, Nor Shazrina Sulaiman
Publikováno v:
Radiotherapy and Oncology. 165:152-158
Background and purpose We aimed to determine the risk factors for radiation-induced brain injury (RIBI 1 ) after carbon ion radiotherapy (CIRT) to predict their probabilities in long-term survivors. Materials and methods We evaluated 104 patients wit
Autor:
Yasuhiro Maeda, Shingo Taniguchi
Publikováno v:
MATERIALS TRANSACTIONS. 61:1981-1986
Publikováno v:
The Journal of Island Studies. 21:39-51
Autor:
Yosuke Izuka, Tsubasa Saito, Koki Shiraishi, Yuichi Sato, Shingo Taniguchi, Houyao Xue, Sora Saito
Publikováno v:
Journal of Crystal Growth. 573:126310
The growth of InN nanopillar crystals on steering-crystal-formed multi-crystalline Si substrates was investigated. It has been proved that the (In)GaN steering nanopillar crystals could be used to control the alignment of InN. In this study, by inser