Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Shingo Kadomura"'
Autor:
Hayato Iwamoto, S. Nishi, Shingo Kadomura, Y. Kobayashi, H. Nakayama, K. Aoyagi, S. Takeshita, Y. Nishimura, N. Todaka, K. Ohno, K. Tatani, Y. Kagawa, M. Kawamura, N. Fujii, Takashi Nagano, Teruo Hirayama, J. Taura, Hirotsugu Takahashi
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We have successfully mass-produced novel stacked back-illuminated CMOS image sensors (BI-CIS). In the new CIS, we introduced advanced Cu2Cu hybrid bonding that we had developed. The electrical test results showed that our highly robust Cu2Cu hybrid b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f1f06b2c1caac486e36fccbee5db44
https://doi.org/10.1109/iedm.2016.7838375
https://doi.org/10.1109/iedm.2016.7838375
Autor:
Hayato Iwamoto, Shigeru Fujita, Tetsuya Ikuta, Heiji Watanabe, Takayoshi Shimura, Shingo Kadomura, Kiyoshi Yasutake
Publikováno v:
Journal of Crystal Growth. 310:4507-4510
The characteristics of in-situ P-doped Si selective epitaxial growth (SEG) under atmospheric pressure (AP) was investigated and compared with in-situ As-doped SEG under AP. Dopant concentrations and growth rates of films grown at AP are higher than t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc529fff786704fa41645ca9cd437c0
https://doi.org/10.1016/j.jcrysgro.2008.08.010
https://doi.org/10.1016/j.jcrysgro.2008.08.010
Autor:
Hayato Iwamoto, Yukio Tagawa, Kazuaki Tanaka, Masaharu Oshima, Masanori Tsukamoto, Ryo Yamamoto, J. Wang, Yoshiya Hagimoto, Shingo Kadomura, Takayuki Uemura, Naoki Nagashima, Saori Kanda, Y. Tateshita, Koji Watanabe, Hitoshi Wakabayashi, Masaki Saito, Kaori Tai, Tomoyuki Hirano, Itaru Oshiyama, S. Yamaguchi, Takashi Ando, Satoshi Toyoda
Publikováno v:
Japanese Journal of Applied Physics. 47:2379-2382
In this paper, we demonstrate a wet treatment for the HfSix/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd0d8a97d34655d546677353a7efbbf
https://doi.org/10.1143/jjap.47.2379
https://doi.org/10.1143/jjap.47.2379
Autor:
Shingo Kadomura, Shigeru Fujita, Tetsuya Ikuta, Heiji Watanabe, Kiyoshi Yasutake, Takayoshi Shimura, Hayato Iwamoto
Publikováno v:
Japanese Journal of Applied Physics. 47:2452-2455
In-situ boron-doped silicon selective epitaxial growth (SEG) was investigated by comparison with in-situ As-doped SEG. The dopant concentration and growth rate of the film grown under low pressure are high for B-doped SEG, while they are high under a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba99a5c5bf93620f9190d84b854cd32
https://doi.org/10.1143/jjap.47.2452
https://doi.org/10.1143/jjap.47.2452
Autor:
Yukio Tagawa, Hitoshi Wakabayashi, Y. Tateshita, Tomoyuki Hirano, Kazuki Tanaka, Naoki Nagashima, S. Yamaguchi, Kaori Tai, Sayuri Kanda, Hayato Iwamoto, Masaki Saito, Mayumi Yamanaka, Takashi Ando, Masanori Tukamoto, Shingo Kadomura, Masashi Nakata, Itaru Oshiyama, Salam Kazi, Ryo Yamamoto
Publikováno v:
Japanese Journal of Applied Physics. 47:2345-2348
We propose a fluorine (F) treatment technique that is suitable for threshold voltage (Vth) modulation in p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with the atomic layer deposition (ALD) TiN/HfO2 gate structure. A wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de478ea60c46909157025f428f77ff50
https://doi.org/10.1143/jjap.47.2345
https://doi.org/10.1143/jjap.47.2345
Autor:
Hayato Iwamoto, Kiyoshi Yasutake, Shigeru Fujita, Tetsuya Ikuta, Heiji Watanabe, Shingo Kadomura, Takayoshi Shimura
Publikováno v:
Surface and Interface Analysis. 40:1122-1125
The characteristics of in situ carbon-doped Si fabricated by selective epitaxial growth (SEG) were investigated. We confirmed the good selectivity, high crystalline quality, high strain and constant carbon profile of the film. The high ratio of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ccf618053286bc93faa75b4a1dd043
https://doi.org/10.1002/sia.2808
https://doi.org/10.1002/sia.2808
Autor:
Heiji Watanabe, Yuki Miyanami, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Shigeru Fujita, Tetsuya Ikuta, Kiyoshi Yasutake
Publikováno v:
Japanese Journal of Applied Physics. 46:1916-1920
We have investigated the AsH3 and GeH4 flow rate dependences of As concentration and growth rate for atmospheric in situ As-doped SiGe selective epitaxial growth. A high As concentration of 3.2×1019 atoms/cm3 and a high growth rate of 13 nm/min were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bddeaa3e2087e76270d64b8a4a4401d
https://doi.org/10.1143/jjap.46.1916
https://doi.org/10.1143/jjap.46.1916
Autor:
Yuki Miyanami, Hayato Iwamoto, Heiji Watanabe, Shigeru Fujita, Tetsuya Ikuta, Shingo Kadomura, Kiyoshi Yasutake, Takayoshi Shimura
Publikováno v:
Science and Technology of Advanced Materials. 8:142-145
Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db634fbf9f59d00358648d2a390c290
https://doi.org/10.1016/j.stam.2007.02.008
https://doi.org/10.1016/j.stam.2007.02.008
Autor:
Koji Watanabe, Naoki Nagashima, Hiroshi Naruse, Yuki Miyanami, Ichiro Mizushima, Kazunobu Ota, Yu Owa, Shigeru Fujita, Sanae Terauchi, Tetsuya Ikuta, Kojiro Nagaoka, Yoshiya Hagimoto, Takashi Shinyama, Shingo Kadomura, Atsushi Horiuchi, Takahiro Katagiri, Hayato Iwamoto
Publikováno v:
ECS Transactions. 3:501-508
We developed a new technique of bilayer embedded SiGe epitaxy for suppressing degradation of short channel characteristics in PFET. We found that the SiGe growth rate near the recess gate edge increased by applying a high DCS flow rate with a high-pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebf999dd6045f36cf1b9050ae20aacce
https://doi.org/10.1149/1.2355847
https://doi.org/10.1149/1.2355847
Autor:
Hitoshi Abe, Shigeru Fujita, Kojiro Nagaoka, Kaori Tai, Toshiaki Hasegawa, Takashi Suzuki, Tomoyuki Hirano, Ryota Katsumata, Jun Idebuchi, Hayato Iwamoto, Naoyuki Sato, Takashi Ando, Shingo Kadomura, Hajime Ugajin, Koji Watanabe, Susumu Hiyama, Atsushi Okuyama
Publikováno v:
Japanese Journal of Applied Physics. 45:3165-3169
In this study, the potential of HfSiON as the node dielectric of deep-trench (DT) capacitors was investigated for the first time. It was found out that a uniform thickness and a uniform depth profile of each component in DT can be obtained by the ALD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4edc978a32221a0eb1c5b13b6cc9d3b8
https://doi.org/10.1143/jjap.45.3165
https://doi.org/10.1143/jjap.45.3165