Výsledky vyhledávání - "Shingo Hokuto"

Optical emission spectroscopy as the monitoring tool in ECR-MBE growth of GaN

Autor: Tatsuya Tominari, Yuui Shimizu, Yasushi Nanishi, Shingo Hokuto, Yasuo Chiba

Publikováno v: Journal of Crystal Growth. :317-320

We demonstrated an observation of excited gallium (Ga*) emission by optical emission spectroscopy (OES) during GaN growth. It was also demonstrated that crystal structure of GaN could be controlled by changing bias conditions during electron-cyclotro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d214d6b601e435ad88ca993e86268700
https://doi.org/10.1016/s0022-0248(98)00277-2

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Structural Dependence of GaN/Al2O3 on Electric Bias During Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)

Autor: Shingo Hokuto, Yuui Shimizu, Yasushi Nanishi, Yasuo Chiba, Tatsuya Tominari

Publikováno v: Japanese Journal of Applied Physics. 37:L700

GaN crystals were grown on a (0001) sapphire substrate by electron cyclotron resonance plasma excited molecular beam epitaxy (ECR-MBE). Grown crystals were analyzed by photoluminescence (PL) measurement at low temperatures and by pole figure mode X-r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd3ff250bd4b8d50de5b290a8a2f9f69
https://doi.org/10.1143/jjap.37.l700

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