Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shingo GENCHI"'
Autor:
Takashi Taniguchi, Shingo Genchi, Azusa N. Hattori, Hidekazu Tanaka, Ai I. Osaka, Kenji Watanabe
Publikováno v:
ACS Applied Electronic Materials. 3:5031-5036
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32447e754969feabb9b63ec517a243e
https://doi.org/10.1021/acsaelm.1c00803
https://doi.org/10.1021/acsaelm.1c00803
Publikováno v:
Vacuum & Surface Science; 2023, Vol. 66 Issue 7, p411-415, 5p
Autor:
Shingo Genchi, Shu Nakaharai, Takuya Iwasaki, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama, Azusa N. Hattori, Hidekazu Tanaka
Publikováno v:
Japanese Journal of Applied Physics. 62:SG1008
Vanadium dioxide (VO2) exhibits an insulator–metal transition (IMT) accompanied with a giant resistance change, which is attractive for the application of devices, such as switching devices. Since the behavior of individual domains determines the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f29fc384630f8bedcc37bf4301e9ca
https://doi.org/10.35848/1347-4065/acb65b
https://doi.org/10.35848/1347-4065/acb65b
Publikováno v:
Applied Physics Letters. 122:041601
This study conducted laser-induced terahertz emission spectroscopy on a VO2/Si heterojunction. Consequently, rapid estimation of the local interface potential was realized and the work function of VO2 was obtained as 5.17–5.25 eV with increasing te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa999b528705bd845ca71fbd462bf64e
https://doi.org/10.1063/5.0136610
https://doi.org/10.1063/5.0136610
Publikováno v:
Applied Physics Express. 15:045503
Vanadium dioxide (VO2) thin films exhibit a metal–insulator transition (MIT) with sensitivity to the lattice strain. Substrates with step and terrace structures are an attractive platform for growing high-quality thin films. Thus, a prominent latti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0229520ed6d38cc145a9c086a3bd2e
https://doi.org/10.35848/1882-0786/ac5c95
https://doi.org/10.35848/1882-0786/ac5c95
Autor:
Shingo Genchi, Mahito Yamamoto, Takuya Iwasaki, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama, Hidekazu Tanaka
Publikováno v:
Applied Physics Letters. 120:053104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d990946d04c0fa47770c71842f4e7a2
https://doi.org/10.1063/5.0072746
https://doi.org/10.1063/5.0072746
Autor:
Teruo Kanki, Ryo Nouchi, Koji Shigematsu, Shodai Aritomi, Takashi Taniguchi, Mahito Yamamoto, Kenji Watanabe, Hidekazu Tanaka, Shingo Genchi, Yasukazu Murakami
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Vanadium dioxide (VO2) is an archetypal metal-insulator transition (MIT) material, which has been known for decades to show an orders-of-magnitude change in resistivity across the critical temperature of approximately 340 K. In recent years, VO2 has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ec9cb2165f1315e28ec9dd5f826117d
https://doi.org/10.1038/s41598-019-39091-8
https://doi.org/10.1038/s41598-019-39091-8
Autor:
Shingo Genchi, Osaka, Ai I., Hattori, Azusa N., Kenji Watanabe, Takashi Taniguchi, Hidekazu Tanaka
Publikováno v:
ACS Applied Electronic Materials; 11/23/2021, Vol. 3 Issue 11, p5031-5036, 6p
Autor:
Shuhei Ichikawa, Takashi Taniguchi, Shingo Genchi, Yasufumi Fujiwara, Kenji Watanabe, Yuto Anzai, Hidekazu Tanaka, Mahito Yamamoto
Publikováno v:
Applied Physics Express. 12:055007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca292e371f314db63edc1f3a09aaf01
https://doi.org/10.7567/1882-0786/ab0e45
https://doi.org/10.7567/1882-0786/ab0e45
Autor:
Yuto Anzai, Mahito Yamamoto, Shingo Genchi, Kenji Watanabe, Takashi Taniguchi, Shuhei Ichikawa, Yasufumi Fujiwara, Hidekazu Tanaka
Publikováno v:
Applied Physics Express; May2019, Vol. 12 Issue 5, p1-1, 1p