Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Shing-Kuo Wang"'
Autor:
Kems-Gwor Wang, Shing-Kuo Wang
Publikováno v:
IEEE Transactions on Electron Devices; 1987, Vol. 34 Issue 12, p2610-2615, 6p
Publikováno v:
IEEE Transactions on Electron Devices; 1986, Vol. 33 Issue 12, p2079-2083, 5p
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; 1986, Vol. 34 Issue 12, p1553-1558, 6p
Autor:
Shing-Kuo Wang, Ching-Der Chang, Siracusa, M., Liu, L.C.T., Pauley, R.G., Asher, P., Sokolich, M.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; 1985, Vol. 33 Issue 12, p1597-1602, 6p
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; 1984, Vol. 32 Issue 10, p1280-1288, 9p
Autor:
Driver, M.C., Shing-Kuo Wang, Przybysz, J.X., Wrick, V.L., Wickstrom, R.A., Coleman, E.S., Oakes, J.G.
Publikováno v:
IEEE Transactions on Electron Devices; 1981, Vol. 28 Issue 2, p191-196, 6p
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 34:1553-1558
A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0475ecb66e63e093fc4c3b5ccf6c7957
https://doi.org/10.1109/tmtt.1986.1133578
https://doi.org/10.1109/tmtt.1986.1133578
Autor:
J. G. Oakes, M.C. Driver, J.X. Przybysz, Shing-Kuo Wang, R. A. Wickstrom, E.S. Coleman, V. L. Wrick
Publikováno v:
IEEE Transactions on Electron Devices. 28:191-196
A fabrication procedure for broad-band monolithic power GaAs integrated circuits has been demonstrated which includes formation of via holes through the 100-µm-thick GaAs substrate. A selective implant of29Si ions into the GaAs substrate is used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34096aa243c0b70ab18dc43bf5e40f1c
https://doi.org/10.1109/t-ed.1981.20309
https://doi.org/10.1109/t-ed.1981.20309
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 34:1548-1552
Several monolithic integrated circuits have been developed to make a 30-GHz receiver. The receiver components include a low-noise amplifier, an IF amplifier, a mixer, and a phase shifter. The LNA has a 7-dB noise figure with over 17 dB of associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b2c0cf6d3780d912fe84dbfe4e313f7
https://doi.org/10.1109/tmtt.1986.1133577
https://doi.org/10.1109/tmtt.1986.1133577
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 32:1280-1288
The variation of transmission phase for single- and dual-gate GaAs MESFET's with bias change and its probable effects on the performance of an active phase shifter have been studied for the frequency range 2 to 4 GHz. from measured S-parameter values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9f9bb7a3177c41bb6102ba30c84213
https://doi.org/10.1109/tmtt.1984.1132838
https://doi.org/10.1109/tmtt.1984.1132838