Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shing Man Lee"'
Publikováno v:
Instrumentation Science & Technology. 44:343-352
Wafer bowing control is critical to improve epitaxial growth quality, especially for large wafers inside a metal–organic chemical vapor deposition reactor. An in-situ monitoring system was developed for real-time characterization of curvature mappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::078fbd47bd2591d1b1cc40779e00715c
https://doi.org/10.1080/10739149.2016.1141783
https://doi.org/10.1080/10739149.2016.1141783
Publikováno v:
Instrumentation Science & Technology. 44:127-138
A multi-probe in situ temperature monitoring system with a closed-loop process control has been developed using the technique of emissivity-compensated pyrometry for semiconductor epitaxial growth via metal-organic chemical vapor deposition. A stand-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98cef628c1f9e1e97224d2478e14490
https://doi.org/10.1080/10739149.2015.1081934
https://doi.org/10.1080/10739149.2015.1081934
Publikováno v:
2013 Third International Conference on Instrumentation, Measurement, Computer, Communication and Control.
In the process of semiconductor layer growth by metal-organic chemical vapor deposition (MOCVD), temperature measurement errors occur due to deposition on the reactor view port. This temperature shift is detrimental for the fabrication of devices. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0deea5ece4b032c90c3c3c27cf5b511e
https://doi.org/10.1109/imccc.2013.199
https://doi.org/10.1109/imccc.2013.199