Zobrazeno 1 - 10
of 701
pro vyhledávání: '"Shinde, S. R."'
Autor:
Kundaliya, Darshan C., Ogale, S. B., Dhar, S., McDonald, K. F., Knoesel, E., Osedach, T., Lofland, S. E., Shinde, S. R., Venkatesan, T.
Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508159
Autor:
Shinde, S. R., Ogale, S. B., Ogale, Abhijit S., Welz, S. J., Lussier, A., Kundaliya, Darshan C., Zheng, H., Dhar, S., Rao, M. S. R., Ramesh, R., Idzerda, Y. U., Browning, N. D., Venkatesan, T.
We revisit the most widely investigated and controversial oxide diluted magnetic semiconductor (DMS), Co:TiO2, with a new high temperature film growth, and show that the corresponding material is not only an intrinsic DMS ferromagnet, but also suppor
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505265
Autor:
Rao, M. S. Ramachandra, Dhar, S., Welz, S. J., Ogale, S. B., Kundaliya, Darshan C., Shinde, S. R., Lofland, S. E., Metting, C. J., Erni, R., Browning, N. D., Venkatesan, T.
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Externí odkaz:
http://arxiv.org/abs/cond-mat/0405378
An external electric field induced reversible modulation of room temperature magnetic moment is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO2. This first demonstration of electric field effect in any oxide ba
Externí odkaz:
http://arxiv.org/abs/cond-mat/0404172
Autor:
Shinde, S. R., Ogale, S. B., Higgins, J. S., Zheng, H., Millis, A. J., Kulkarni, V. N., Ramesh, R., Greene, R. L., Venkatesan, T.
We report a detailed magnetic and structural analysis of highly reduced Co doped rutile TiO2 films displaying an anomalous Hall effect (AHE). The temperature and field dependence of magnetization, and transmission electron microscopy clearly establis
Externí odkaz:
http://arxiv.org/abs/cond-mat/0403056
We report Hall effect measurements on thin films of cobalt-doped TiO$_{2-\delta}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$) yield a linear behavior in the Hall data while those having higher carrier concentrations (10$^{21}$ - 10
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311041
Autor:
Guha, S., Ghosh, K., Keeth, J. G., Ogale, S. B., Shinde, S. R., Simpson, J. R., Drew, H. D., Venkatesan, T.
We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K
Externí odkaz:
http://arxiv.org/abs/cond-mat/0303177
Autor:
Ogale, S. B., Choudhary, R. J., Buban, J. P., Lofland, S. E., Shinde, S. R., Kale, S. N., Kulkarni, V. N., Higgins, J., Lanci, C., Simpson, J. R., Browning, N. D., Sarma, S. Das, Drew, H. D., Greene, R. L., Venkatesan, T.
Occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn1-xCoxO2-d (x<0.3). Interestingly, films of Sn0.95Co0.05O2-d grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature cl
Externí odkaz:
http://arxiv.org/abs/cond-mat/0301456
Autor:
Kale, S. N., Ogale, S. B., Shinde, S. R., Sahasrabuddhe, M., Kulkarni, V. N., Greene, R. L., Venkatesan, T.
Thin films of 5 % Co doped Cu2O were grown on single crystal (001) MgO substrates by pulsed laser deposition, without and with 0.5 % codoping with Al, V or Zn. Structural, electrical, and magnetic properties were studied. The films showed phase pure
Externí odkaz:
http://arxiv.org/abs/cond-mat/0301455
Autor:
Zhao, Y. G., Shinde, S. R., Ogale, S. B., Higgins, J., Lofland, S. E., Lanci, C., Buban, J. P., Browning, N. D., Sarma, S. Das, Millis, A. J., Kulkarni, V. N., Choudhary, R. J., Greene, R. L., Venkatesan, T.
Ferromagnetism is observed at and above room temperature in pulsed laser deposited epitaxial films of Co-doped Ti-based oxide perovskite (La1-xSrxTiO3-d). The system has the characteristics of an intrinsic diluted magnetic semiconductor (metal) at lo
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209267