Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Shin-ichiro Uekusa"'
Publikováno v:
Physics Procedia. 23:9-12
(220)- and (422)-oriented Co-doped n-type β-FeSi2 films were formed onto p-type Si (100) by radio frequency (RF) magnetron sputtering using a FeSi2 target which placed square Co chips and by subsequent annealing at 900 °C for 20 h. The effects of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c1181af5afbfeb9c8daa5f2f43d1b7
Publikováno v:
Procedia Engineering. 36:404-410
We have succeeded in growing compositionally homogeneous Si0.5Ge0.5 crystals with a newly developed growth method named the travelling liquidus-zone (TLZ) method. In this method, a narrow liquidus-zone saturated by a solute is formed at relatively lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c173fc41deb0a886fa1d844c9685a1e7
Autor:
Hiroshi Katsumata, M. Ishiyama, H. Souma, Shin-ichiro Uekusa, D. Yuasa, I. Azumaya, H. Yamada
Publikováno v:
Physics Procedia. 23:13-16
β-FeSi2 bulk materials for thermoelectric applications were prepared from high-purity (99.99%) β-FeSi2 powders or mixed Si and Fe powders. First, FeSi2 powders were milled to reduce the particle size, which can improve the thermoelectric figure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dda844ce47247962109bac4251f20a5b
https://doi.org/10.1016/j.phpro.2012.01.004
https://doi.org/10.1016/j.phpro.2012.01.004
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 10:107-113
The electrical resistivity and the barrier property of Tantalum nitride (TaN) thin films were systematically investigated as a function of annealing temperature using two different types of MIS structures of TaN/SiO2/Si and Cu/TaN/dielectric/Si(100),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b163a5853c98ebfdf9217d4e364551
https://doi.org/10.1380/ejssnt.2012.107
https://doi.org/10.1380/ejssnt.2012.107
Publikováno v:
Physics Procedia. 23:69-72
Microwave absorption composites were synthesized from a poly urushiol epoxy resin (PUE) mixed with one of microwave absorbing materials; Ni-Zn ferrite, Soot, Black lead, and carbon nano tube (CNT) to investigate their microwave absorption properties.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08777119b49164adc0eebf61d0ea313c
Publikováno v:
Journal of Surface Analysis. 17:247-251
Tantalum Nitride (TaN) thin films were deposited onto n-type Si(100) and (111) substrates with SiO2 films at room temperature by radio frequency (RF) magnetron sputtering under Ar-N2 plasma using a tantalum target. We observed the formation of TaN th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d82bda6fef0cf0055c8082b583492f71
https://doi.org/10.1384/jsa.17.247
https://doi.org/10.1384/jsa.17.247
Publikováno v:
Physics Procedia. 11:158-162
Ecological friendly β- FeSi2 thin film has been formed on FZ-Si (111) substrates using sintered FeSi2 (purity 99.99%) and electrolytic Fe (purity 99.99%) targets by pulsed laser deposition (PLD) method in an ArF (λ=193nm) excimer laser. Subsequentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5554e91059d4c28caf74d7ef01be631
https://doi.org/10.1016/j.phpro.2011.01.045
https://doi.org/10.1016/j.phpro.2011.01.045
Autor:
Yozo Watanabe, Shin-ichiro Uekusa
Publikováno v:
Vacuum. 84:514-517
(ZnO)1−x(GaN)x:Mn2+ powder was prepared by a conventional solid-state reaction under an NH3 gas flow. The sample preparation conditions including the mixing ratio of the raw materials, the annealing temperature, and the annealing time were varied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2d80d3d0f787409f81daf65eaabe3e
https://doi.org/10.1016/j.vacuum.2009.10.015
https://doi.org/10.1016/j.vacuum.2009.10.015
Publikováno v:
Applied Surface Science. 256:1227-1231
β-FeSi 2 thin films were prepared on Si (1 1 1) substrates by pulsed laser deposition (PLD) with a sintering FeSi 2 target and an electrolytic Fe target. The thin films without micron-size droplets were prepared using the electrolytic Fe target; how
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc115ba1a00b8f4403c2423d96b99c83
https://doi.org/10.1016/j.apsusc.2009.05.072
https://doi.org/10.1016/j.apsusc.2009.05.072
Publikováno v:
Journal of Luminescence. 129:931-936
β-FeSi 2 thin films were prepared on FZ n -Si (1 1 1) substrates by pulsed laser deposition (PLD). The structural properties and crystallographic orientation of the films were investigated by X-ray diffraction (XRD) analysis. This indicates that β-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321bee8e89ad38d6eff48f7d6101281a
https://doi.org/10.1016/j.jlumin.2009.03.039
https://doi.org/10.1016/j.jlumin.2009.03.039