Zobrazeno 1 - 10
of 200
pro vyhledávání: '"Shin-ichi NISHIZAWA"'
Autor:
Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-Ichi Nishizawa, Wataru Saito
Publikováno v:
IEEE Access, Vol 12, Pp 96936-96945 (2024)
The health monitoring prediction of power devices is vital for power electronics applications such as renewable converters, electric vehicles, and machine drives. One significant failure mode in the power cycle degradation of Insulated Gate Bipolar T
Externí odkaz:
https://doaj.org/article/56cc239cec64451d8dbdeb6da0aa6792
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 392-401 (2024)
This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in realizing a solid-state circuit breaker lies in reducing conduction
Externí odkaz:
https://doaj.org/article/9c0b98bb4ce04e5ab6dcb986bad8fdb3
Publikováno v:
Power Electronic Devices and Components, Vol 7, Iss , Pp 100054- (2024)
This paper reports the mechanism of gate voltage spike in the turn-off operation by a digital gate control. In the previous work, it was clarified that the gate voltage spike Vg_spike was generated by parasitic inductance and a large gate current cha
Externí odkaz:
https://doaj.org/article/9fbf9ea7b9d046df82c97feaa7773608
Publikováno v:
Power Electronic Devices and Components, Vol 6, Iss , Pp 100047- (2023)
This paper aims to clarify the effect of asymmetric gate inductance Lg and emitter inductance Le inside power modules with two parallel-connected IGBTs on switching characteristics when a three-step digital gate driver is employed. Five types of IGBT
Externí odkaz:
https://doaj.org/article/db9bf21cb1e24e7da7ea335324224733
Publikováno v:
Power Electronic Devices and Components, Vol 6, Iss , Pp 100052- (2023)
This paper presents a new detection method of bond wire lift-off in Insulated Gate Bipolar Transistor (IGBT) power module. The bond wire lift-off is a major failure mode in power cycle degradation of the IGBT module, and many monitoring methods have
Externí odkaz:
https://doaj.org/article/8871d5630c9b4163bbfac6019ba62d7d
Publikováno v:
IEEE Access, Vol 11, Pp 6632-6640 (2023)
This paper clarifies the effect of gate inductance $L_{g}$ inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different $L_{g}$ were fabricated to implement double pulse tests by conventional ga
Externí odkaz:
https://doaj.org/article/c3482012efd14d0484119e4a6246232d
Autor:
Wataru Saito, Shin-Ichi Nishizawa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 23-28 (2022)
Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation. Although the scaling design improves tur
Externí odkaz:
https://doaj.org/article/99552225b0614556980a45481d9c367f
Autor:
Wataru Saito, Shin-Ichi Nishizawa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 512-515 (2022)
A new parameter optimization method using zoomed response surface (RS) is proposed for automatic design of low-voltage power MOSFET. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also
Externí odkaz:
https://doaj.org/article/0c4a384ae32a4a6f838114d4825930bc
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 552-556 (2021)
A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to fla
Externí odkaz:
https://doaj.org/article/3e63b739eb2f49b0b3b9782fe7e19a21
Autor:
Kaoru Kajiwara, Kazutaka Eriguchi, Kazuhiro Fusegawa, Noritomo Mitsugi, Shuichi Samata, Kazuhisa Torigoe, Kazuhiro Harada, Masataka Hourai, Shin-Ichi Nishizawa
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 35:620-625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88536a70f6afcfb89eca9ee59d6232d
https://doi.org/10.1109/tsm.2022.3199862
https://doi.org/10.1109/tsm.2022.3199862