Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shin-Shing Yeh"'
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a352ac06848f515a80d4c6abb20b632c
https://doi.org/10.1117/12.2611337
https://doi.org/10.1117/12.2611337
Publikováno v:
Optical Microlithography XXXII.
For deep sub-wavelength lithography, loss of wafer fidelity, such as line end shortening and corner rounding, is a known patterning phenomenon due to the diffraction limitation of the optical systems and some other processing effects. Without properl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8db835af9ac23520811c16e033c33f8
https://doi.org/10.1117/12.2515443
https://doi.org/10.1117/12.2515443
Autor:
Shin-Shing Yeh, Hung-Yu Lin, Philippe Hurat, Yung-Ching Mai, Lawrence Lin, Yi-Chieh Chen, Ya Chieh Lai, Jun-Cheng Lai, Wei Xu, Tsong-Hua Ou
Publikováno v:
SPIE Proceedings.
Beyond 40 nm technology node, the pattern weak points and hotspot types increase dramatically. The typical patterns for lithography verification suffers huge turn-around-time (TAT) to handle the design complexity. Therefore, in order to speed up proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586c796826b295a48aa910a25befb9c1
https://doi.org/10.1117/12.2257973
https://doi.org/10.1117/12.2257973
Publikováno v:
SPIE Proceedings.
It’s critical to address the yield issues caused by process specific layout patterns with limited process window. RETs such as PWOPC are introduced to guarantee high lithographic margin, but these techniques cost high run-time when applied to full-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b7f8568473daae9b52f143e9ff1ad0
https://doi.org/10.1117/12.2046059
https://doi.org/10.1117/12.2046059
Autor:
Arthur Lin, Jun-Cheng Nelson Lai, Stewart A. Robertson, Sanjay Kapasi, Ya-Hsuan Hsieh, Kao-Tun Chen, John J. Biafore, Shin-Shing Yeh
Publikováno v:
SPIE Proceedings.
Beyond 40nm lithography node, mask topograpy is important in litho process. The rigorous EMF simulation should be applied but cost huge time. In this work, we compared experiment data with aerial images of thin and thick mask models to find patterns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e24f02f40764d334c4d34ef9f483496
https://doi.org/10.1117/12.846010
https://doi.org/10.1117/12.846010
Publikováno v:
Physical Review E. 76
We study the formation of columnar structures of uniaxial dipoles in an external magnetic field both experimentally and theoretically. By applying an external magnetic field parallel to a thin layer of a magnetorheological fluid, we manipulate a sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a24d291c6494ff3a8748a8fa5694caf
https://doi.org/10.1103/physreve.76.051407
https://doi.org/10.1103/physreve.76.051407
Autor:
Shin-Shing Yeh, Peilong Chen
Publikováno v:
Physical review. E, Statistical, nonlinear, and soft matter physics. 72(3 Pt 2)
We calculate the free energy density for inhomogeneous electrolytes based on the mean-field Debye-H\"uckel theory. Derived are the contributions of (1) the differential term for the electrolyte density being slow varying in one direction and (2) the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e46a19725692a0696cb474397ea5fbe6
https://pubmed.ncbi.nlm.nih.gov/16241527
https://pubmed.ncbi.nlm.nih.gov/16241527