Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shin-Fu Lin"'
Autor:
Yu-Shyan Lin, Shin-Fu Lin
Publikováno v:
Micromachines, Vol 12, Iss 1, p 7 (2020)
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation la
Externí odkaz:
https://doaj.org/article/d3bfb5b5efd742d18301350bd08ddd0d
Autor:
Shin-Fu Lin, 林信甫
101
This research mainly investigated on AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 and TiO2 as a surface passivation layer, respectively. Excellent improvements in HfO2-passivated device performances have been achieved for
This research mainly investigated on AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 and TiO2 as a surface passivation layer, respectively. Excellent improvements in HfO2-passivated device performances have been achieved for
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77349172766757032452
Autor:
Shin-Fu Lin, 林新富
90
The output voltage or current of PWM Inverter are not sinusoidal wave. It means the output of PWM Inverter has harmonic components, and it will bring huge damage for the electric circuit. Therefore, we have to analysis and calculate the harmo
The output voltage or current of PWM Inverter are not sinusoidal wave. It means the output of PWM Inverter has harmonic components, and it will bring huge damage for the electric circuit. Therefore, we have to analysis and calculate the harmo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/34569737305080518212
Autor:
Yu-Shyan Lin, Shin-Fu Lin
Publikováno v:
Micromachines, Vol 12, Iss 7, p 7 (2021)
Micromachines
Volume 12
Issue 1
Micromachines
Volume 12
Issue 1
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b1d636c89a0d04fd00abd9b7c46ac85
https://www.mdpi.com/2072-666X/12/1/7
https://www.mdpi.com/2072-666X/12/1/7
Publikováno v:
Electric Power Components and Systems. 32:1105-1120
The purpose of this article is to analyze the harmonic spectrum of the three-phase PWM inverter drives used in a power system. The analytical methods are based on a 3-D modulation model and double Fourier series (DFS). In this article, with Matlab, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa86a351bfb94470722c6b297e557b2
https://doi.org/10.1080/15325000490441381
https://doi.org/10.1080/15325000490441381
Publikováno v:
Semiconductor Science and Technology. 30:015016
This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f37904e0eab53687eba7ced143164b
https://doi.org/10.1088/0268-1242/30/1/015016
https://doi.org/10.1088/0268-1242/30/1/015016
Publikováno v:
Electric Power Components & Systems; Nov2004, Vol. 32 Issue 11, p1105-1120, 16p
Publikováno v:
Semiconductor Science & Technology; Jan2015, Vol. 30 Issue 1, p1-1, 1p