Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Shin-Deuk An"'
Autor:
Lee, Suk Hun, Park, Se Geun, Kim, Shin Deuk, Jung, Hyuck-Chai, Kim, Il Gweon, Kang, Dong-Ho, Kim, Dae Jung, Lee, Kyu Pil, Choi, Joo Sun, Baek, Jung-Woo, Choi, Moonsuk, Park, Yongkook, Choi, Changhwan, Park, Jin-Hong
Publikováno v:
In Materials Research Bulletin October 2016 82:22-25
Publikováno v:
Journal of Applied Biological Chemistry. 60:257-263
A cellulolytic strain Y2 was isolated from soil obtained in the Canadian Alpine region. The isolate was identified as Paenibacillus sp. Y2 by 16S rRNA sequencing. When grown in LB medium supplemented with carboxymethyl-cellulose (CMC), CMCase product
Autor:
Jin-Hong Park, Moonsuk Choi, Dae Jung Kim, Joo Sun Choi, Yongkook Park, Jung Woo Baek, Kyu-Pil Lee, Hyuck Chai Jung, Shin Deuk Kim, Segeun Park, Chang Hwan Choi, Il Gweon Kim, Suk Hun Lee, Dong-Ho Kang
Publikováno v:
Materials Research Bulletin. 82:22-25
In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performanc
Publikováno v:
ECS Transactions. 61:343-347
As Transistor length shrink, many unexpected short channel effects occur under 20nm size. Among these short channel effects, this paper explains about reliability problem of FN degradation and its improvement in 3-Dimension Transistor. The graph of F
Autor:
E. S. Jung, Jin-Seong Park, Shin-Deuk Kim, Hyeongsun Hong, Jung-hyeon Kim, J.M. Park, C. H. Cho, G. Y. Jin, S.W. Nam, Sung-Kee Han, Kwan-Heum Lee, Byoung-Ho Kim, Soo-Ho Shin, Jeong-Wook Seo, Young-Nam Hwang
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the sam
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Autor:
G. Stefanovich, Suk-Jin Chung, Bo Soo Kang, I-hun Song, Myoung-Jae Lee, Huaxiang Yin, J.M. Park, Seung-Eon Ahn, Ki-chul Kim, Shin-Deuk Kim, S. Kim, Chang Bum Lee, Yun Daniel Park, J. H. Lee, Jong-Man Park, In-Gyu Baek, Chang-Sub Lee, Chang Jung Kim, Yohan Kim
Publikováno v:
2008 IEEE International Electron Devices Meeting.
This paper reports on new concept consisting of all-oxide-based device component for future high density non-volatile data storage with stackable structure. We demonstrate a GaInZnO (GIZO) thin film transistors (TFTs) integrated with 1D (CuO/InZnO)-1
Autor:
Jong-Man Park, Donggun Park, Wouns Yang, Yong-seok Lee, Chang-Hoon Jeon, Wookje Kim, Sangyeon Han, Young-pil Kim, Jun-Bum Lee, S. Yamada, Shin-Deuk Kim, Si-Ok Sohn, Won-Seong Lee, Jung-Soo Park
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We have successfully fabricated fully integrated advanced RCAT (Recess Channel Array Transistor) featuring partially insulating oxide layers in bulk Si substrate, named Partially-insulated-RCAT (Pi-RCAT) to suppress body effect of conventional RCAT a
Autor:
Nak-Jin Son, Byung-Il Ryu, Donggun Park, Chang-Hoon Jeon, Satoru Yamada, Shin-Deuk Kim, Young-pil Kim, Jung-Su Park, Sang-Yeon Han, Wouns Yang, Wookje Kim, Wonseok Lee, Siok Soh
Publikováno v:
2006 European Solid-State Device Research Conference.
Gate induced drain leakage (GIDL) characteristics were investigated with the recessed channel array transistor (RCAT) for DRAM, using the elevated source drain (ESD). The lower doping concentration of a source-drain region in the ESD structure reduce
Autor:
Jong-Man Park, Shin-Deuk Kim, Donggun Park, Jun-Bum Lee, Wookje Kim, Si-Ok Sohn, Sang-Yeon Han, Wouns Yang, Satoru Yamada, Byung-Il Ryu, Chang-Hoon Jeon
Publikováno v:
2006 International Electron Devices Meeting.
For the first time, we have successfully fabricated fully integrated advanced bulk FinFETs featuring partially insulating oxide layers under source/drain (S/D), named Partially-Insulated- FinFETs (PI-FinFETs), to control sub-channel on the bottom par