Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shin Hyuk Yang"'
Autor:
Kyoung Ik Cho, Chun Won Byun, Hye Yong Chu, Jae Heon Shin, Doo Hee Cho, Sang-Hee Ko Park, Min-Ki Ryu, Woo Seok Cheong, Sung Min Yoon, Shin Hyuk Yang, Chi-Sun Hwang
Publikováno v:
Journal of the Korean Physical Society. 54:527-530
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1bc02f05dac65311a7782e3f7560f7d
https://doi.org/10.3938/jkps.54.527
https://doi.org/10.3938/jkps.54.527
Autor:
Cheol Seong Hwang, Shin Hyuk Yang, Min Ki Ryu, Doohyung Cho, Chun-Won Byun, Jeong-Ik Lee, Hye-Yong Chu, Jaeheon Shin
Publikováno v:
Journal of the Korean Physical Society. 54:531-534
We have studied transparent bottom-gate TFTs (thin film transistors) using amorphous IGZO (In-Ga-Zn-O) as an active channel material. The TFT devices had inverse co-planar structures. Source/drain and gate electrodes were constituted by ITO sputtered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5a5d3a55fc27945790d44eeda6507d
https://doi.org/10.3938/jkps.54.531
https://doi.org/10.3938/jkps.54.531
Autor:
Byeong Hoon Kim, Min Ki Ryu, Sung-Min Yoon, Chun Won Byun, Chi-Sun Hwang, Sang-Hee Ko Park, Eun-Suk Park, Him Chan Oh, Kyounghwan Kim, Oh-Sang Kwon, Kyoung-Ik Cho, Soon-Won Jung, Shin Hyuk Yang, Kee-Chan Park
Publikováno v:
IEEE Electron Device Letters. 32:324-326
A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroeth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7761d2da2b5c45460a3f1e446c339267
https://doi.org/10.1109/led.2010.2096197
https://doi.org/10.1109/led.2010.2096197
Autor:
Kyoung Ik Cho, Chun-Won Byun, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Oh-Sang Kwon, Shin Hyuk Yang, Eun-Suk Park
Publikováno v:
SID Symposium Digest of Technical Papers. 41:1367
We investigated the effect of the light-induced bias instability of indium-gallium-zinc oxide(IGZO) thin film transistors. The IGZO TFT exhibited the excellent subthreshold gate swing of 0.12V/decade, Vth of −0.5V, and high Ion/off ratio of >109 as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7da7ec691c887470b1409f7595cb761
https://doi.org/10.1889/1.3499954
https://doi.org/10.1889/1.3499954
Autor:
Sung-Min Yoon, Soon-Won Jung, Shin-Hyuk Yang, Chun-Won Byun, Chi-Sun Hwang, Ishiwara, Hiroshi
Publikováno v:
Journal of The Electrochemical Society; 2010, Vol. 157 Issue 7, pH771-H778, 8p, 3 Charts, 7 Graphs
Publikováno v:
Journal of The Electrochemical Society; 2010, Vol. 157 Issue 7, pH727-H733, 7p, 1 Chart, 5 Graphs
Autor:
Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Tokumitsu, Eisuke, Ishiwara, Hiroshi
Publikováno v:
Applied Physics Letters; 6/7/2010, Vol. 96 Issue 23, p232903, 3p, 1 Chart, 3 Graphs