Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shin‐Yi Yin"'
Autor:
Shin-Yi Yin, 尹心怡
101
Nowadays m-commerce is booming. Mobile application plays a critical role in this context. The phenomenon that brands publish various brand-related apps in the app stores becomes more popular. Brands tend to satisfy customers with their produ
Nowadays m-commerce is booming. Mobile application plays a critical role in this context. The phenomenon that brands publish various brand-related apps in the app stores becomes more popular. Brands tend to satisfy customers with their produ
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/58320175168956116003
Autor:
Shin-Yi Yin, 殷歆宜
97
As the cases of musculoskeletal disorders have been increased in the past decade, it indicates many more workers are suffered from them than ever. Among all, betel nut stuffing workers are one of the high risk groups. Most previous studies on
As the cases of musculoskeletal disorders have been increased in the past decade, it indicates many more workers are suffered from them than ever. Among all, betel nut stuffing workers are one of the high risk groups. Most previous studies on
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/44990243340631039802
Autor:
Yi‐Chia Hsieh, Chih‐Yu Lin, Hsin‐Yao Lin, Chun‐Ting Kuo, Shin‐Yi Yin, Ying‐Hua Hsu, Hsiu‐Feng Yeh, Jane Wang, Dehui Wan
Publikováno v:
Advanced Healthcare Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546a519c4428c40a9505231badfddf00
https://doi.org/10.1002/adhm.202300321
https://doi.org/10.1002/adhm.202300321
Publikováno v:
Journal of Physics D: Applied Physics. 52:195102
In this paper, we performed a systematic investigation of the threshold-voltage (V th) instability of enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The E-mode MIS-HEMTs are first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b32995654c82fc9135b826ae15f80c4
https://doi.org/10.1088/1361-6463/ab053d
https://doi.org/10.1088/1361-6463/ab053d
Publikováno v:
Journal of Physics D: Applied Physics; 5/8/2019, Vol. 52 Issue 19, p1-1, 1p