Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Shimpei Nishiyama"'
Autor:
Shimpei Nishiyama, Kimihiko Kato, Mizuki Kobayashi, Raisei Mizokuchi, Takahiro Mori, Tetsuo Kodera
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-6 (2022)
Abstract We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the qu
Externí odkaz:
https://doaj.org/article/6612db17f0aa4177a989f37e8cb816bb
Autor:
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows
Externí odkaz:
https://doaj.org/article/f7088c220e734d0da88ca46bb64b8f95
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4cd42b9deae8e7d5e83c0f5cd6d1e37
https://doi.org/10.7567/ssdm.2020.i-6-02
https://doi.org/10.7567/ssdm.2020.i-6-02
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0471eb1761b00281e7cc1ec650d1b6e4
