Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shimin Ge"'
Publikováno v:
Micromachines, Vol 15, Iss 3, p 400 (2024)
This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the sourc
Externí odkaz:
https://doaj.org/article/fb68a1dd23674dd296ccfa5c4423b058
Autor:
Hang Wang, Shimin Ge, S Y Wang, Yi Zhang, Yanhong Meng, Wei Long, K Wang, Wei Liu, Shan Li, Juncheng Xiao, Bin Zhao
Publikováno v:
SID Symposium Digest of Technical Papers. 53:715-720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d172cf67f88983e919149261e685954b
https://doi.org/10.1002/sdtp.16070
https://doi.org/10.1002/sdtp.16070
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1543-1545
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f534861543ebce0aac5a9de6a72710dd
https://doi.org/10.1002/sdtp.11944
https://doi.org/10.1002/sdtp.11944