Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Shilu Zhan"'
Autor:
Ming Zhao, Guoan Ren, Xunyan Lyu, Yixuan Wu, Xiao Peng, Daming Zhuang, Rujun Sun, Qianming Gong, Yaowei Wei, Leng Zhang, Wenyu Zhang, Shilu Zhan
Publikováno v:
Solar Energy Materials and Solar Cells. 180:19-24
The CZTSSe/CdS interface qualities are vital aspects and factors that would greatly decide the photovoltaic performance of CZTSSe solar cells. High-quality CZTSSe/CdS interfaces could reduce defect density and improve CZTSSe device performance. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6589f3d68af7bc78f1d411e3833fe35e
https://doi.org/10.1016/j.solmat.2018.02.002
https://doi.org/10.1016/j.solmat.2018.02.002
Autor:
Xinzhi Yang, Peng Bao, Xing Li, Nengchang Li, Binghui Lei, Shilu Zhang, Dengwei Ding, Chao Xu
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045138-045138-5 (2024)
A method for visualization of surface discharge area in SF6 based on infrared trap is proposed in this study. The infrared images of a heated insulator with a surface defect under different applied voltages were studied, and the infrared trap phenome
Externí odkaz:
https://doaj.org/article/fb73b3abeed343af849f4ab29c4832cb
Autor:
Xiao Peng, Shilu Zhan, Qianming Gong, Leng Zhang, Ming Zhao, Li Guo, Rujun Sun, Daming Zhuang, Liangqi Ouyang, Xunyan Lyu, Yaowei Wei
Publikováno v:
Journal of Alloys and Compounds. 727:572-578
In order to investigate the effects of Sb-doping induced grain growth of Cu(InGa)Se 2 (CIGS) films processed from quaternary target, thin metallic Sb layers have been deposited in the bottom, in the middle and on the top of CIGS layer, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4052be8a417f53eff4e88fea0a0d4c
https://doi.org/10.1016/j.jallcom.2017.07.340
https://doi.org/10.1016/j.jallcom.2017.07.340
Autor:
Liangqi Ouyang, Qianming Gong, Leng Zhang, Li Guo, Ming Zhao, Xiao Peng, Shilu Zhan, Xunyan Lyu, Rujun Sun, Daming Zhuang, Yaowei Wei
Publikováno v:
Solar Energy. 157:1074-1081
In this study, the influences of doping with antimony sulfide (Sb2S3) and metallic Sb on the properties of Cu(InGa)Se2 (CIGS) films and devices have been investigated. The incorporation of metallic Sb in CIGS films has little effect on grain growth,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1736481481408d13e034d6e4c68699
https://doi.org/10.1016/j.solener.2017.07.036
https://doi.org/10.1016/j.solener.2017.07.036
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 406:596-599
In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf39ea4d5f65fa24d4befcd499480540
https://doi.org/10.1016/j.nimb.2017.01.041
https://doi.org/10.1016/j.nimb.2017.01.041
Autor:
Daming Zhuang, Ming Zhao, Rujun Sun, Li Guo, Leng Zhang, Qianming Gong, Yaowei Wei, Liangqi Ouyang, Shilu Zhan
Publikováno v:
Applied Surface Science. 413:175-180
For the two-step method of Cu(In,Ga)Se2 (CIGS) fabrication process in which the selenization step follows the CIGS precursors deposition step, H2Se gas is employed as the selenium source, which may lead to an inhomogeneous gas field and potentially h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cc7e435579bc1d1644b9b7201db8454
https://doi.org/10.1016/j.apsusc.2017.03.289
https://doi.org/10.1016/j.apsusc.2017.03.289
Autor:
Li Guo, Yaowei Wei, Xiao Peng, Ming Zhao, Yixuan Wu, Leng Zhang, Rujun Sun, Daming Zhuang, Shilu Zhan, Liangqi Ouyang, Guoan Ren, Xunyan Lv
Publikováno v:
Journal of Alloys and Compounds. 710:172-176
The presence of H 2 Se is important for the growth of the grain size of sputtered CIGS during the selenization. However, the crystallization of the surface CIGS results in the higher density of the local area that suppressed the diffusion of H 2 Se i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a86cff0372512c7faad5bcc71be90fd
https://doi.org/10.1016/j.jallcom.2017.02.016
https://doi.org/10.1016/j.jallcom.2017.02.016
Autor:
Yaowei Wei, Xiao Peng, Yixuan Wu, Liangqi Ouyang, Rujun Sun, Xunyan Lv, Ming Zhao, Daming Zhuang, Guoan Ren, Li Guo, Shilu Zhan, Leng Zhang
Publikováno v:
Journal of Alloys and Compounds. 709:31-35
The residual Cu x Se phase results in shunt leakage paths in Cu-rich Cu(In,Ga)Se 2 (CIGS) which can cause serious degradation in the conversion efficiency. The conductive atom force microscopy(C-AFM) was employed to obtain a direct evidence of shunt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54f336b6d3edf9800bf7d2e2511b40e3
https://doi.org/10.1016/j.jallcom.2017.03.142
https://doi.org/10.1016/j.jallcom.2017.03.142
Autor:
Liangqi Ouyang, Qianming Gong, Yaowei Wei, Leng Zhang, Rujun Sun, Shilu Zhan, Daming Zhuang, Li Guo, Ming Zhao
Publikováno v:
Vacuum. 137:205-208
Two kinds of Cu(InGa)Se 2 (CIGS) absorbers and the corresponding solar cells have been fabricated by sputtering from Se-poor and Se-rich quaternary CIGS targets, respectively. The CIGS thin films fabricated by Se-poor target are mainly composed of ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dececc832ef55ee077816880e2fb7d9b
https://doi.org/10.1016/j.vacuum.2016.12.041
https://doi.org/10.1016/j.vacuum.2016.12.041
Autor:
Shasha Li, Lulu Wang, Jing Shi, Yi Chen, Ang Xiao, Bingyue Huo, Wenjing Tian, Shilu Zhang, Gang Yang, Wensheng Gong, Huixia Zhang
Publikováno v:
PeerJ, Vol 12, p e16752 (2024)
Background As a component of chromatin remodeling complex, chromatin accessibility complex subunit 1 (CHRAC1) is critical in transcription and DNA replication. However, the significance of CHRAC1 in cancer progression has not been investigated extens
Externí odkaz:
https://doaj.org/article/f671e387de7f4c29b6c973479f433fef