Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Shilong Lv"'
Publikováno v:
InfoMat, Vol 3, Iss 9, Pp 1008-1015 (2021)
Abstract Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge2Sb2Te5 (GST) limits further ap
Externí odkaz:
https://doaj.org/article/b77cfa4b1df949ef80b8d64ebf948896
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-11 (2021)
Abstract Phase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation
Externí odkaz:
https://doaj.org/article/4e6c6ea5b6934bd282d4367a01165940
Autor:
Shujing Jia, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv, Min Zhu, Zhitang Song, Qi Liu, John Robertson, Ming Liu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Designing efficient selector devices for large-scale nonvolatile memory and neuromorphic array systems remains a challenge. Here, the authors propose a two-terminal ovonic threshold switching selector device with a large drive current density and a h
Externí odkaz:
https://doaj.org/article/f55c3b2ef22149ad897218f33edd1c0d
Autor:
Min Zhu, Wenxiong Song, Philipp M. Konze, Tao Li, Baptiste Gault, Xin Chen, Jiabin Shen, Shilong Lv, Zhitang Song, Matthias Wuttig, Richard Dronskowski
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Quantitative imaging on the doping in phase-change materials for data storage remains scarce. Here, the authors combine electron microscopy, atom probe tomography, and simulations to determine the role of indium and silver dopants during recrystalliz
Externí odkaz:
https://doaj.org/article/5fdeafe041d145dcb9cec998f6f9ddb2
Autor:
Min Wang, Ni Yao, Rongbo Wu, Zhiwei Fang, Shilong Lv, Jianhao Zhang, Jintian Lin, Wei Fang, Ya Cheng
Publikováno v:
New Journal of Physics, Vol 22, Iss 7, p 073030 (2020)
High-quality lithium niobate (LN) thin-film microresonators provide an ideal platform for on-chip nonlinear optical applications. The strict phase-matching condition should be satisfied for an efficient nonlinear optical process, which requires dispe
Externí odkaz:
https://doaj.org/article/b17c345f4e2c42c1b940bd9c9e271502
Publikováno v:
Journal of Materials Chemistry C. 10:3585-3592
Phase change memory based on Ta-GST exhibits superior thermal stability and reliability, so it is expected to be used in high-temperature applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697c076a74b2aae14642b46404196804
https://doi.org/10.1039/d1tc06045g
https://doi.org/10.1039/d1tc06045g
Autor:
Jiabin Shen, Shujing Jia, Nannan Shi, Qingqin Ge, Tamihiro Gotoh, Shilong Lv, Qi Liu, Richard Dronskowski, Stephen R. Elliott, Zhitang Song, Min Zhu
Publikováno v:
Science. 374:1390-1394
Single element switch Phase-change materials are attractive for computer memory and switching, in part due to their small size and fast switching speeds. However, competitive materials frequently have many elements, which decreases the switching reli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a9603de044a771af4cc1202e5605688
https://doi.org/10.1126/science.abi6332
https://doi.org/10.1126/science.abi6332
Autor:
Shilong Lv, Zenghui Liu
Publikováno v:
2022 5th World Conference on Mechanical Engineering and Intelligent Manufacturing (WCMEIM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0bdb40525bda583b36c2d07c7ed7424
https://doi.org/10.1109/wcmeim56910.2022.10021545
https://doi.org/10.1109/wcmeim56910.2022.10021545
Publikováno v:
Journal of Applied Physics; 8/21/2020, Vol. 128 Issue 7, p1-10, 10p
Publikováno v:
InfoMat, Vol 3, Iss 9, Pp 1008-1015 (2021)
Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge2Sb2Te5 (GST) limits further application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33a05946558c16dca5bab0b0cf165f3f
https://doi.org/10.1002/inf2.12233
https://doi.org/10.1002/inf2.12233