Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Shiliu Xu"'
Publikováno v:
Electronics Letters, Vol 52, Iss 9, Pp 740-742 (2016)
A high DC gain self‐cascode structure of operational transconductance amplifier (OTA) design with bandwidth enhancement is proposed. Based on the concept of self‐cascode structure, which provides high output resistance and transconductance, the p
Externí odkaz:
https://doaj.org/article/21b9c8cc1bb54076a08db8a2835efaaf
Autor:
Lei Qiu, Can Zhu, Jiang Hequan, Shiliu Xu, Wang Jian'an, Zhengping Zhang, Yu Xiaoquan, Xu Daiguo
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1990-1997
This paper presents a linearity-enhanced 10-bit 160-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with a high-speed and low-noise comparator. A p-well floating technique for linearity improvement of sampling switch is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a708024727e86a764fc963ffa2851726
https://doi.org/10.1109/tvlsi.2019.2912504
https://doi.org/10.1109/tvlsi.2019.2912504
Publikováno v:
IET Circuits, Devices & Systems. 13:368-373
This study presents the rapid calibration of bits weights error for an 18 bit successive approximation register analogue-to-digital converter (ADC). This calibration technique is a new hybrid algorithm. Comparing to the traditional methods, this tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e849d84572672960790b24db5666fbd
https://doi.org/10.1049/iet-cds.2018.5220
https://doi.org/10.1049/iet-cds.2018.5220
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:1545-1553
This paper presents an 8-bit 320-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with the linearity-improved technique. A linearity-improved sampling switch with parasitic capacitance compensation, which makes the paras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d87f9cfc902d1d0543cd32bd1831c6
https://doi.org/10.1109/tvlsi.2018.2822678
https://doi.org/10.1109/tvlsi.2018.2822678
Autor:
Dongbin Fu, Xing Sheng, Wang Jian'an, Guangbing Chen, Shiliu Xu, Xu Daiguo, Ting Sun, Can Zhu, Han Yang
Publikováno v:
Journal of Circuits, Systems and Computers. 30:2150040
This paper presents noise reduction and modified asynchronous logic regulation techniques used in successive approximation register (SAR) analog-to-digital converter (ADC). With a transconductance enhanced structure, noise reduction is provided in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4e634d9b63099108c50415a195393f1
https://doi.org/10.1142/s0218126621500407
https://doi.org/10.1142/s0218126621500407
Publikováno v:
Electronics Letters. 52:1207-1209
An improved self-blocking flip-flop design is proposed. With smaller clock load and simpler structure, the proposed design is compared with previous flip-flop structures. In the same size of input/output transistors and load capacitance, the proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7729a5350a5b9cf6fff892341b47367a
https://doi.org/10.1049/el.2016.0836
https://doi.org/10.1049/el.2016.0836
Autor:
Yuan Jun, Dongbin Fu, Rongbin Hu, Wang Jian'an, Jiang Hequan, Can Zhu, Yu Xiaoquan, Shiliu Xu, Xu Daiguo
Publikováno v:
Journal of Circuits, Systems and Computers. 29:2050084
This paper presents a linearity improved 10-bit 120-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with high-speed and low-noise dynamic comparator. A gate cross-coupled technique is introduced in boost sampling switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42478f806e5657cb8854e1e03756c940
https://doi.org/10.1142/s021812662050084x
https://doi.org/10.1142/s021812662050084x
Publikováno v:
Journal of Crystal Growth. 343:122-126
A1. Defects A1. High resolution X-ray diffraction B1. Nitrides B2. Semiconducting III-V materials abstract We have investigated the influence of basal stacking fault (BSF) and impurity related defect on the strain state of a-plane GaN epilayers. Four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c559fe8916f0b71c5b3c4c70f0e600a7
https://doi.org/10.1016/j.jcrysgro.2012.01.001
https://doi.org/10.1016/j.jcrysgro.2012.01.001
Autor:
Lin-An Yang, J.C. Ma, JunShuai Xue, Xiaowei Zhou, Ziyang Liu, Shiliu Xu, Yan-Rong Cao, Feng Bao, Yang Hao, Jincheng Zhang, Jinfeng Zhang
Publikováno v:
Journal of Crystal Growth. 327:94-97
We report on the use of TiN interlayer to reduce the threading dislocation density in nonpolar a-plane GaN material grown by metal organic chemical vapor deposition (MOCVD), where the interlayer was formed by depositing the Ti metal on a GaN template
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6879713d46a78cf651f62b4133c7489
https://doi.org/10.1016/j.jcrysgro.2011.06.013
https://doi.org/10.1016/j.jcrysgro.2011.06.013
Autor:
Yang Hao, Lin-An Yang, Xinxiu Ou, Xiaowei Zhou, Jincheng Zhang, Wei Mao, Shiliu Xu, Yan-Rong Cao, Ke Chen
Publikováno v:
Journal of Crystal Growth. 312:3521-3524
We have investigated the unintentional impurities, oxygen and carbon, in GaN films grown on c-plane, r-plane as well as m-plane sapphire by metal-organic chemical vapor deposition. The GaN layer was analyzed by secondary ion mass spectroscopy. The di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d0a6f21114a761257ae8386f1454c25
https://doi.org/10.1016/j.jcrysgro.2010.09.026
https://doi.org/10.1016/j.jcrysgro.2010.09.026