Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shikha Somani"'
Autor:
Frank E. Gennari, Karthik Krishnamoorthy, Shikha Somani, Ya-Chieh Lai, Sriram Madhavan, Piyush Pathak, Fadi Batarseh, Wei-Long Wang, Uwe Paul Schroeder, Philippe Hurat, Jason Sweis, Bob Pack, Jaime Bravo
Publikováno v:
SPIE Proceedings.
At advanced technology nodes (sub-22 nm), design rules become very complicated as interactions between multiple layers become more complex, while the number of design elements within the optical radius increases. As a result, one may possibly encount
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e9c57b98fcbe9ee58eddeac4880d907
https://doi.org/10.1117/12.2220145
https://doi.org/10.1117/12.2220145
Publikováno v:
The Journal of Physical Chemistry C. 115:11507-11513
We use B3LYP hybrid density functional theory to investigate atomistic mechanisms for the atomic layer deposition (ALD) of tantalum nitride (TaN) grown using tert-butylimidotris(diethylamido)tantalum [(tBuN)(NEt2)3Ta, TBTDET], and ammonia (NH3) as pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca4bf543a552aadcc487810b5731ad9
https://doi.org/10.1021/jp1059374
https://doi.org/10.1021/jp1059374
Publikováno v:
Macromolecules. 43:10679-10691
Polymers undergo a sharp coil−stretch transition in extension dominated flows when the strain rate exceeds a critical strain rate. We investigate this transition in both Θ solvents and good solvents using Brownian dynamics simulations. The polymer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e9f157f4ef29bd831f13cf95150853
https://doi.org/10.1021/ma1019945
https://doi.org/10.1021/ma1019945
Autor:
Rani S. Ghaida, Shikha Somani, Carl P. Babcock, Jingyu Wang, Sarah McGowan, Yang Y. Ping, Sriram Madhavan, Piyush Pathak, Fadi Batarseh, Piyush Verma
Publikováno v:
SPIE Proceedings.
Optical Proximity Correction (OPC) is a compute-intensive process used to generate photolithography mask shapes at advanced VLSI nodes. Previously, we reported a modified two-step OPC flow which consists of a first pattern replacement step followed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000d180952d35001c0fb0756a57d68ab
https://doi.org/10.1117/12.2087094
https://doi.org/10.1117/12.2087094
Publikováno v:
SPIE Proceedings.
Pattern based design rule checks have emerged as an alternative to the traditional rule based design rule checks in the VLSI verification flow [1]. Typically, the design-process weak-points, also referred as design hotspots, are classified into patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8971666a1b2c9517f901aec865d97f14
https://doi.org/10.1117/12.2086954
https://doi.org/10.1117/12.2086954
Publikováno v:
SPIE Proceedings.
Traditional physical design verification tools employ a deck of known design rules, each of which has a pre-defined pass/fail criteria associated with it. While passing a design rule deck is a necessary condition for a VLSI design to be manufacturabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af7134724020c121d4136b9bf6ac11d
https://doi.org/10.1117/12.2087078
https://doi.org/10.1117/12.2087078
Publikováno v:
SPIE Proceedings.
Techniques to control Across Chip CD Variation are very important in IC design, since it directly impacts the electrical timing and functionality of the designs. VLSI designs today include a rich variety of electrical devices (different gate oxide th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ba057249e18d9c3ed4f97864a2a616d
https://doi.org/10.1117/12.2069346
https://doi.org/10.1117/12.2069346
Publikováno v:
SPIE Proceedings.
Full chip model based Optical Proximity Correction (OPC) at advanced nodes involves iteratively modifying the drawn polygon shapes while simulating them through complex optical and resist models. Due to the computational complexity of the models and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61cf132f1a3cf716fce036a587f0378a
https://doi.org/10.1117/12.2068998
https://doi.org/10.1117/12.2068998