Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Shikang Cheng"'
Autor:
Zhang Wentong, He Junqing, Bo Zhang, Zhaoji Li, Boyong He, Shikang Cheng, Sen Zhang, Ming Qiao
Publikováno v:
IEEE Electron Device Letters. 41:1392-1395
A novel self-modulated superjunction lateral double-diffused MOSFET (SM-SJ LDMOS) is proposed and experimentally realized in this letter. When a SJ is introduced into a lightly doped N-drift region, the 3-D depletion regions appear surrounding the P-
Autor:
Bo Zhang, Sen Zhang, Jie Wei, Xiaorong Luo, Congcong Li, Deng Gaoqiang, Shikang Cheng, Zhen Ma, Zhao Zheyan
Publikováno v:
IEEE Electron Device Letters. 41:465-468
A novel Lateral Double-Diffused MOSFET (LDMOSFET) with ultra-low resistance is investigated by experiments. The proposed LDMOSFET features an extended gate field plate consisting of two back-to-back diodes. In the ON state, the electron accumulation
Autor:
Zhaoji Li, Ming Qiao, Shikang Cheng, Wang Rui, Zhang Wentong, Sen Zhang, SenYan Gu, Bo Zhang, Boyong He
Publikováno v:
IEEE Electron Device Letters. 40:1969-1972
A lateral double diffused metal oxide semiconductor transistor with the semi-superjunction (semi-SJ LDMOS) is optimized based on the normalized current-carrying capability (CC) and experimentally realized in this letter. The device is fabricated base
Autor:
Sen Zhang, Li Lu, Bo Zhang, Zhan Zhenya, Shikang Cheng, Boyong He, Xiaorong Luo, Ming Qiao, Zhaoji Li, Zhang Wentong
Publikováno v:
IEEE Electron Device Letters. 40:1151-1154
A novel high voltage ultra-thin silicon on insulator (SOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOS) with a sectional linearly doped drift region is proposed and experimentally realized in this letter. The new
Autor:
Zhaoji Li, Ming Qiao, Shikang Cheng, Yu Yang, Gu Yan, Zhang Wentong, Xiaorong Luo, Sen Zhang, Zhan Zhenya, Zehong Li, Bo Zhang
Publikováno v:
IEEE Electron Device Letters. 38:1555-1558
A novel superjunction (SJ) lateral double-diffused MOSFET (>950 V) with a thin layer SOI combining the advantage of low specific on-resistance ${R}_{\text {on,sp}}$ of the SJ and the high breakdown voltage ${V}_{\text {B}}$ of the thin SOI is propose
Autor:
Shaohong Li, Sen Zhang, Xin Tong, Ling Sun, Long Zhang, Hao Wang, Qingxi Tang, Shikang Cheng, Jing Zhu, Weifeng Sun
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we have proposed an enlightening and feasible process concept for irradiated Super-Junction Vertical Diffusion Metal Oxide Semiconductor (SJ-VDMOS) to realize fast reverse recovery of its body diode and maintain the stable threshold vo
Autor:
Lai Chunlan, Zhuo Wang, Ming Qiao, Zhang Wentong, Shikang Cheng, Sen Zhang, Xiaorong Luo, Ye Li, Boyong He, Bo Zhang, Pu Song, Zhaoji Li
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
To realize the minimum specific on-resistance R on, sp of the lateral superjunction (SJ) devices, the low resistance characteristic of the SJ should be adequately used and the adverse influence of substrate-assisted depletion (SAD) effect on the brea
Autor:
Sen Zhang, Leng Jing, Yangyang Lu, Weifeng Sun, Jing Zhu, Zhicheng Yu, Shikang Cheng, Yunwu Zhang, Kongsheng Hu
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Benefit from the presented new Common Mode Dual-Interlock (CMDI) structure, a 600V high-side gate driver base on norma 0.5μm 600V Bipolar-CMOS-DMOS (BCD) technology achieving the high dV S /dt noise immunity larger than 85V/ns and low propagation de
Autor:
Sen Zhang, Yan Gu, Weifeng Sun, Long Zhang, Qingxi Tang, Jing Zhu, Ling Sun, Hao Wang, Shikang Cheng, Yangbo Yi, Shaohong Li
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A high-voltage SOI-LIGBT with high turn-off speed and low turn-off loss (E OFF ) is proposed in this paper. The proposed SOI-LIGBT features a Low-doped Buried N-layer (LBN) region and an emitter-side Electric Potential Modulation Trench (EPMT) shorte
Autor:
Qi Zhao, Sen Zhang, Wen Yang, Shikang Cheng, Bo Zhang, Ming Qiao, Xin Zhou, Fang Dong, Zhaoji Li
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A latch-up immune robust SCR with an N+ top layer and an additional Nwell region (Nwell2) is proposed in this paper. The N+ top layer and Nwell2 divide the original SCR into three new SCRs with sharing emitter, which provide the deeper ESD current (I