Zobrazeno 1 - 10
of 213
pro vyhledávání: '"Shijo Nagao"'
Publikováno v:
APL Materials, Vol 9, Iss 10, Pp 101114-101114-6 (2021)
The size dependence of Young’s modulus and the critical pressure for phase transformation from the diamond structure at ambient pressure to a metallic β-Sn structure at high pressure was studied in a Si phononic crystal. We used dynamic mechanic
Externí odkaz:
https://doaj.org/article/08aa94eb56c944d6a550f5d81d505c91
Autor:
Yue Gao, Wanli Li, Chuantong Chen, Hao Zhang, Jinting Jiu, Cai-Fu Li, Shijo Nagao, Katsuaki Suganuma
Publikováno v:
Materials & Design, Vol 160, Iss , Pp 1265-1272 (2018)
A novel die-attach material, Cu particle paste with self-reduction and self-protection characteristics, was designed by simply adding ascorbic acid (AA) into Cu paste. The self-reduction characteristic is due to the addition of AA into the paste, as
Externí odkaz:
https://doaj.org/article/2a7d3475c638457e9e795c4b7fd0b847
Autor:
Dongjin Kim, Yasuyuki Yamamoto, Shijo Nagao, Naoki Wakasugi, Chuantong Chen, Katsuaki Suganuma
Publikováno v:
Micromachines, Vol 10, Iss 11, p 745 (2019)
This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum ox
Externí odkaz:
https://doaj.org/article/2f1828b5196a4f7d890bafe502508ce4
Publikováno v:
International Journal of Applied Ceramic Technology. 19:232-240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec930c875b69d4919d787e5c20a045b2
https://doi.org/10.1111/ijac.13819
https://doi.org/10.1111/ijac.13819
Autor:
Tohru Sugahara, Chuantong Chen, Yasuyuki Yamamoto, Shijo Nagao, Tetsu Takemasa, Katsuaki Suganuma, Dongjin Kim, Naoki Wakasugi, Aiji Suetake
Publikováno v:
IEEE Transactions on Power Electronics. 36:4977-4990
Despite the rapid progression of silicon carbide (SiC) power devices, the thermal characteristic evaluation during power cycling at high temperature (>200 °C) is an issue. In this article, a fast and miniaturized evaluation system with online therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e5e5715c42255a5a6f7d382896fd29
https://doi.org/10.1109/tpel.2020.3031670
https://doi.org/10.1109/tpel.2020.3031670
Publikováno v:
Journal of Materials Science. 56:9852-9870
Ag sinter joining technology is emerging as a die attach material for next-generation power modules in high-temperature applications. Thermal shock test has revealed that the fracture characteristics and reliability of sintered Ag joint were influenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8024a06781b8c6dea2c1ef7fc2e4767
https://doi.org/10.1007/s10853-021-05924-z
https://doi.org/10.1007/s10853-021-05924-z
Publikováno v:
Scripta Materialia. 184:1-5
Reactive bonding using nanoscale multilayers based on the high specific surface/interface energy is a promising low-temperature and low-pressure wafer-bonding process. Herein, Si wafers were bonded using nanoscale Ag/Cu multilayers in N2 or the ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c762f02d522932da4e4c3f186303435
https://doi.org/10.1016/j.scriptamat.2020.03.043
https://doi.org/10.1016/j.scriptamat.2020.03.043
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:3715-3726
This study was carried out to develop a DBA (direct bonded aluminum) substrate with Ni/Ti/Ag metallization to achieve highly functional thermal shock stability of Ag sinter joining in GaN (Gallium Nitride) power modules. GaN /DBA die-attached module
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4307bfd18974a06519113c0dccdad67
https://doi.org/10.1007/s10854-020-02930-w
https://doi.org/10.1007/s10854-020-02930-w
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:587-598
Ag sinter joining provides superior mechanical and thermal/electrical properties and is considered to become a leading next-generation wide band-gap (WBG) die-attach material. However, the microstructural evolution and mechanical characteristics of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5143fc163ac2523462a72b270f3771d2
https://doi.org/10.1007/s10854-019-02563-8
https://doi.org/10.1007/s10854-019-02563-8
Autor:
Chuantong Chen, Yuichi Sakuma, Takeshi Endo, Tohru Sugahara, Shijo Nagao, Tomohito Iwashige, Kazuhiko Sugiura, Yukinori Oda, Katsuaki Suganuma, Kazuhiro Tsuruta
Publikováno v:
Journal of Materials Science. 55:644-659
The application of Co-W-P plating technology in high-temperature package structure is advantageous from a point of structural reliability because Co-W-P metallization is known to deliver strong bonding to both high-temperature-compatible Ag-sintered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03e23e3a71c183b618d9ed54575e4c7
https://doi.org/10.1007/s10853-019-04028-z
https://doi.org/10.1007/s10853-019-04028-z