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We have experimentally studied the multilevel resistive switching in forming-free nanocrystalline ZnO films. It was shown that potentiation and depression at 0.5 V and ‒0.5 V for 3000 cycles led to the film resistance increasing by 3 orders of magn
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https://explore.openaire.eu/search/publication?articleId=doi_________::df38c08955742bda5a5675bcc49bfd82
