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pro vyhledávání: '"Shih-Tsong Lin"'
Autor:
Shih-tsong Lin, 林世聰
94
In this thesis, a bottom gate TFT with smart body tie device is realized, For a PDSOI devices, which usually uses large layout areas of body ties, and it has self-heating effect resulting from the buried oxide between the silicon film and sub
In this thesis, a bottom gate TFT with smart body tie device is realized, For a PDSOI devices, which usually uses large layout areas of body ties, and it has self-heating effect resulting from the buried oxide between the silicon film and sub
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08023805508858319103
Publikováno v:
ECS Transactions. 2:1-7
A novel structure of bottom gate polysilicon thin-film transistor (TFT) with smart body tie is firstly investigated. Comparing with a conventional bottom gate TFT, the simulation results derived from the well-known ISE-TCAD simulator have shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::249c28ae3eaf9828671da17067c969c6
https://doi.org/10.1149/1.2409018
https://doi.org/10.1149/1.2409018
Publikováno v:
2006 25th International Conference on Microelectronics.
In this paper, a novel bottom gate polysilicon thin-film transistor (TFT) with smart body tie is presented. Besides, several body-recessed structures are firstly presented and studied. Comparing with the corresponding conventional bottom gate TFT, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f95cf13bff36d2c23b248238cae2f0b
https://doi.org/10.1109/icmel.2006.1650970
https://doi.org/10.1109/icmel.2006.1650970