Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Shih-Pang Chang"'
Autor:
Cheng-Chang Chen, Hsiang-Ting Lin, Shih-Pang Chang, Hao-Chung Kuo, Hsiao-Wen Hung, Kuo-Hsiang Chien, Yu-Choung Chang, M. H. Shih
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
Abstract In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regr
Externí odkaz:
https://doaj.org/article/0e25dd714424451bbc74433cc8709775
Autor:
Shih-Pang Chang, 張世邦
103
Smart phone has become a major mobile electronic devices for the current customer. The upgrading of mobile network technology make the mobile instant messaging more and more popular. Smart phone’s voice service let the communication bill c
Smart phone has become a major mobile electronic devices for the current customer. The upgrading of mobile network technology make the mobile instant messaging more and more popular. Smart phone’s voice service let the communication bill c
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01849436899260187129
Autor:
Hsiao Wen Hung, Shih-Pang Chang, Yu Choung Chang, Cheng-Chang Chen, Hao-Chung Kuo, Hsiang Ting Lin, Kuo Hsiang Chien, Min-Hsiung Shih
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth proc
Autor:
Shih-Pang Chang, Bo-Wen Lin, Yen-Hsien Yeh, Chun-Yen Chang, Hao-Chung Kuo, Yun-Jing Li, Jet-Rung Chang, Yuh-Jen Cheng
Publikováno v:
Journal of Display Technology. 12:951-956
We demonstrated a full visible spectrum emission from a 3D multifacet microrod light-emitting diode (LED). The microrods were fabricated by top-down patterned etched and regrowth. Hexagonal {11-20} and {11-22} facets were first formed on the microrod
Publikováno v:
ACS Applied Materials & Interfaces. 7:273-278
We have demonstrated nitrogen-polar (0001̅) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and
We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::872d2e8c4106aa5fc8404b7cc8e4fc87
Autor:
Kun-Lin Lin, Shih-Hong Chen, Guang-Li Luo, Mon-Yang Chen, Rong-Ren Lee, Shih-Pang Chang, Chun-Jung Su, Ta-Cheng Hsu, Wen-Da Hsu, Wen-Kuan Yeh, Jen-Inn Chyi, Shih-Chang Lee, Chien-Ting Wu
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
In this paper, we report that a nearly defect free In 0.71 Ga 0.29 As fin structure can be selectively grown inside oxide nano-trenches on a Ge template by using composition-graded InGaP as a buffer layer. A growth model is proposed to explain the st
Publikováno v:
Journal of Crystal Growth. 312:1307-1310
The influence of the LT-GaN nucleation layer on the quality of the GaN template was investigated by the study of the surface morphology of the nucleation layer, and of the crystalline and optical properties of the subsequently grown a -plane GaN temp
Autor:
Jet Rung Chang, Yu Lin Tsai, Shih-Pang Chang, Chien-Chung Lin, Hao-Chung Kuo, Yuh-Jen Cheng, Peichen Yu, Chun-Yen Chang, Yun-Jing Li
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We report the fabrication and study of coreshell InGaN/GaN multiple quantum well (MQW) nanorod photovoltaic device. The nanorods were fabricated from a GaN substrate by top-down etch, followed by InGaN/GaN MQW growth. The 3D geometry allows higher In
Publikováno v:
CLEO: 2015.
We report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.