Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Shih-Nan Hsiao"'
Autor:
Hiroshi Hashizume, Hidemi Kitano, Hiroko Mizuno, Akiko Abe, Shih-Nan Hsiao, Genki Yuasa, Satoe Tohno, Hiromasa Tanaka, Shogo Matsumoto, Hitoshi Sakakibara, Eisuke Kita, Yoji Hirosue, Masayoshi Maeshima, Masaaki Mizuno, Masaru Hori
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-16 (2024)
Abstract In present investigation, the effort is done to enhance the grain quality in brewer’s rice cultivar Yamadanishiki with the plasma treatment of caryopsis (rice fruit) on ripening process. Seedlings transplanted from a paddy field into pots
Externí odkaz:
https://doaj.org/article/332e00749bda406287343b545d5b3025
Autor:
Shih-Nan Hsiao, 蕭世男
99
L10 FePt phase have drawn considerable attention in recent years due to its remarkable intrinsic properties including high magnetocrystalline anisotropy (Ku ~ 7 × 107 erg/cm3), Curie temperature (~450 °C), and chemical stability, etc., whic
L10 FePt phase have drawn considerable attention in recent years due to its remarkable intrinsic properties including high magnetocrystalline anisotropy (Ku ~ 7 × 107 erg/cm3), Curie temperature (~450 °C), and chemical stability, etc., whic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40743202610087536233
Autor:
Shih-Nan Hsiao, 蕭世男
93
Fe49-xCoxPt51(x = 0, 0.7, 1.3 and 2.2 at%) thin films were fabricated by magnetron sputtering. The thickness of the films ranged from 20 nm to 100 nm; the in-situ annealing temperature ranged from 400oC to 700oC. The crystal structure changes
Fe49-xCoxPt51(x = 0, 0.7, 1.3 and 2.2 at%) thin films were fabricated by magnetron sputtering. The thickness of the films ranged from 20 nm to 100 nm; the in-situ annealing temperature ranged from 400oC to 700oC. The crystal structure changes
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/17812864317040219397
Publikováno v:
Journal of Applied Physics. 133
Atmospheric repetitive He discharge with 10 ns current peak width and 3×1011 V/s voltage front rise working in jet geometry is studied. This part deals with the ionization waves, electron density, and electric field dynamics. The electron density (n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::664a9172a782087612c37a329bc138ba
https://doi.org/10.1063/5.0138931
https://doi.org/10.1063/5.0138931
Publikováno v:
2022 International Symposium on Semiconductor Manufacturing (ISSM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b296fdb1ff23159cbe2a29fbfdbd0c2
https://doi.org/10.1109/issm55802.2022.10026920
https://doi.org/10.1109/issm55802.2022.10026920
Autor:
Shih-Nan Hsiao, Yusuke Imai, Nikolay Britrun, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori
Publikováno v:
2022 International Symposium on Semiconductor Manufacturing (ISSM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46926ce90d5e44a7d1de0be504a3e585
https://doi.org/10.1109/issm55802.2022.10027112
https://doi.org/10.1109/issm55802.2022.10027112
Autor:
Shih-Nan Hsiao, Nikolay Britun, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori
Publikováno v:
Vacuum. 210:111863
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0252308b6644f15600502483934ec531
https://doi.org/10.1016/j.vacuum.2023.111863
https://doi.org/10.1016/j.vacuum.2023.111863
Autor:
Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori
Publikováno v:
Coatings; Volume 11; Issue 12; Pages: 1535
Coatings, Vol 11, Iss 1535, p 1535 (2021)
Coatings, Vol 11, Iss 1535, p 1535 (2021)
With the increasing interest in dry etching of silicon nitride, utilization of hydrogen-contained fluorocarbon plasma has become one of the most important processes in manufacturing advanced semiconductor devices. The correlation between hydrogen-con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef309325b0308c06095fdb86a9c6b788
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1009
In a dual-frequency capacitively coupled Ar plasma, the secondary electron emission (SEE) coefficients were estimated using a 2D fluid model and experiments. The electron density was measured in the plasma chamber with the upper and lower electrodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a45b1e0656d914ff39aa1062e21f566a
https://doi.org/10.35848/1347-4065/ac80ea
https://doi.org/10.35848/1347-4065/ac80ea
Autor:
Masaru Hori, Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Makoto Sekine, Takayoshi Tsutsumi, Kenji Ishikawa
Publikováno v:
2020 International Symposium on Semiconductor Manufacturing (ISSM).
The dependences of plasmas (CF 4 /D 2 and CF 4 /H 2 ) on etch rates of the PECVD SiN films at different substrate temperatures were investigated. The CF 4 /D 2 plasma exhibited higher etch rates than that for the CF 4 /D 2 plasma at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f4bf0cdaa5dfc93ac54217f77113d1
https://doi.org/10.1109/issm51728.2020.9377537
https://doi.org/10.1109/issm51728.2020.9377537